3DG180 Specs and Replacement
Type Designator: 3DG180
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3DG180 Substitution
- BJT ⓘ Cross-Reference Search
3DG180 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG180 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificat... See More ⇒
2SC1809(3DG1809) NPN /SILICON NPN TRANSISTOR Purpose FM radio RF amplifier applications. f T Features High f , low output capacitance, low base time constant and high gain, T excellent noise characteristics. /A... See More ⇒
3DG183 NPN A B C D E PCM TA=25 700 mW ICM 100 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 300 350 400 450 500 V V(BR)CEO ICE=0.1mA 300 350 400 450 500 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 2.0 A IE... See More ⇒
Detailed specifications: 3DG1623, 3DG1627A, 3DG1627AF, 3DG1675, 3DG1740M, 3DG1740S, 3DG1741AM, 3DG1741S, TIP32C, 3DG1809, 3DG181, 3DG1815, 3DG1815M, 3DG182, 3DG183, 3DG1859, 3DG1906
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