All Transistors. 3DG181 Datasheet


3DG181 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG181

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.7 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO18

3DG181 Transistor Equivalent Substitute - Cross-Reference Search


3DG181 Datasheet (PDF)

1.1. 3dg1815.pdf Size:234K _china


2SC1815(3DG1815) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频放大,激励级放大。 Purpose: Audio frequency general purpose ,driver stage amplifier applications. 特点:耐压高,电流大,有极好的 h 特性,低噪声系数,可与 2SA1015(3CG1015)互补。 FE Features: High voltage and high current, excellent h linearity ,low noise ,complementary FE p

1.2. 3dg1815m.pdf Size:387K _china


2SC1815M(3DG1815M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于普通低频放大,激励级放大。/Purpose: Audio frequency general purpose, driver stage amplifier applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 60 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 50 mA B P 300 mW C T

 1.3. 3dg181.pdf Size:32K _china


Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG181, 3DG182 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal am

Datasheet: 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .

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