3DG181 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG181
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO18
3DG181 Transistor Equivalent Substitute - Cross-Reference Search
3DG181 Datasheet (PDF)
3dg181.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG181, 3DG182 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal am
3dg1815.pdf
2SC1815(3DG1815) NPN /SILICON NPN TRANSISTOR :, Purpose: Audio frequency general purpose ,driver stage amplifier applications. :,, h ,, 2SA1015(3CG1015) FEFeatures: High voltage and high current, excellent h linearity ,low noise ,complementary FEp
3dg1815m.pdf
2SC1815M(3DG1815M) NPN /SILICON NPN TRANSISTOR :,/Purpose: Audio frequency general purpose, driver stage amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 50 mA B P 300 mW C T
3dg183.pdf
3DG183 NPN A B C D E PCM TA=25 700 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 300 350 400 450 500 V V(BR)CEO ICE=0.1mA 300 350 400 450 500 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 2.0 A IE
3dg182.pdf
3DG182 NPN A B C D E PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 100 140 180 220 V V(BR)CEO ICE=0.1mA 60 100 140 180 220 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 2.0 A IEBO VEB=2V
3dg1809.pdf
2SC1809(3DG1809) NPN /SILICON NPN TRANSISTOR : Purpose: FM radio RF amplifier applications. :f TFeatures: High f , low output capacitance, low base time constant and high gain, T excellent noise characteristics. /A
3dg1859.pdf
2SC1859(3DG1859) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power amplifier applications. 2SB1238(3CA1238) Features: High breakdown voltagehigh currentcomplementary pair with 2SB1238(3CA1238). /Absolute maximum ratings(Ta=25) Symbol R
3dg180.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG180NPN Silicon High Reverse Voltage High Frequency Middle Power TransistorFeatures: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificat
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC5110
