3DG2060 Specs and Replacement
Type Designator: 3DG2060
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 82
Package: TO92L
3DG2060 Substitution
- BJT ⓘ Cross-Reference Search
3DG2060 datasheet
3DG2053(2SC2053) NPN PCM TA=25 600 mW ICM 300 mA Tjm 135 Tstg -55 135 V(BR)CBO ICB=1mA 40 V V(BR)CEO ICE=10mA 17 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=15V 20 A IEBO VCB=3V 20 A VCE=5V hFE 50 IC=10mA 1. E ... See More ⇒
2SC2058S(3DG2058S) NPN /SILICON NPN TRANSISTOR Purpose High frequency amplifier. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 40 V CBO V 25 V CEO V 5.0 V EBO I 50 mA C P 300 mW C T 150 j T -55 150 stg /Electrical characteristics(... See More ⇒
2SC2001(3DG2001) NPN /SILICON NPN TRANSISTOR /Purpose Output stage of portable radio and cassette type tape recorder, general purpose applications. , h /Features High total power dissipation, FE low V and high h . CE(sat) FE /Absolut... See More ⇒
Detailed specifications: 3DG1921, 3DG1923, 3DG1959, 3DG1959M, 3DG19A, 3DG2001, 3DG2053, 3DG2058S, 2N5551, 3DG210, 3DG2102, 3DG2120, 3DG2216, 3DG2216M, 3DG2218A, 3DG2219, 3DG2222
Keywords - 3DG2060 pdf specs
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History: 2SA1210R | 2N157A | ZTX3866 | BD109D | STD13003Q
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