3DG2102 Specs and Replacement
Type Designator: 3DG2102
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3DG2102 Substitution
- BJT ⓘ Cross-Reference Search
3DG2102 datasheet
3DG210 NPN A B C PCM 1000 mW ICM 1000 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 80 100 120 V V(BR)CEO ICE=0.1mA 60 80 100 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 1.0 A IEBO VEB=2V 0.1 A VBEsat ... See More ⇒
Detailed specifications: 3DG1959, 3DG1959M, 3DG19A, 3DG2001, 3DG2053, 3DG2058S, 3DG2060, 3DG210, C1815, 3DG2120, 3DG2216, 3DG2216M, 3DG2218A, 3DG2219, 3DG2222, 3DG2222A, 3DG2229
Keywords - 3DG2102 pdf specs
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