All Transistors. 3DG2120 Datasheet

 

3DG2120 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG2120

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

3DG2120 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG2120 Datasheet (PDF)

1.1. 3dg2120.pdf Size:262K _china

3DG2120
3DG2120

2SC2120(3DG2120) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频功率放大。/Purpose: Audio frequency power amplifier applications. 特点:高 h ,可得 1W 输出,与 2SA950(3CG950)互补。/Features: High h ,1 watts amplifier FE FE, applications, complementary pair with 2SA950(3CG950). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单

5.1. 3dg210.pdf Size:118K _china

3DG2120

3DG210 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C PCM 1000 mW 极 ICM 1000 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥80 ≥100 ≥120 V V(BR)CEO ICE=0.1mA ≥60 ≥80 ≥100 V V(BR)EBO IEB=0.1mA ≥6.0 V ICBO VCB=10V ≤0.1 μA 直 ICEO VCE=10V ≤1.0 μA 流 参 IEBO VEB=2V ≤0.1 μA 数 VBEsat

5.2. 3dg2102.pdf Size:115K _china

3DG2120

3DG2102 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C PCM TA=25℃ 1000 mW 极 ICM 1000 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥60 ≥80 ≥100 V V(BR)CEO ICE=0.1mA ≥80 ≥100 ≥120 V V(BR)EBO IEB=0.1mA ≥6 V 直 ICBO VCE=10V ≤0.1 μA 流 参 VBEsat ≤1.2 Ic=500mA V 数 IB=50mA VCEsat

Datasheet: D32S1 , D32S10 , D32S2 , D32S3 , D32S4 , D32S5 , D32S6 , D32S7 , BC547 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 , D32W7 , D32W8 .

 
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