All Transistors. 3DG2120 Datasheet

 

3DG2120 Datasheet and Replacement


   Type Designator: 3DG2120
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92
 

 3DG2120 Substitution

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3DG2120 Datasheet (PDF)

 ..1. Size:262K  lzg
 3dg2120.pdf pdf_icon

3DG2120

2SC2120(3DG2120) NPN /SILICON NPN TRANSISTOR :/Purpose: Audio frequency power amplifier applications. : h , 1W , 2SA950(3CG950)/Features: High h ,1 watts amplifier FEFE,applications, complementary pair with 2SA950(3CG950). /Absolute maximum ratings(Ta=25)

 9.1. Size:115K  china
 3dg2102.pdf pdf_icon

3DG2120

3DG2102 NPN A B C PCM TA=25 1000 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 80 100 V V(BR)CEO ICE=0.1mA 80 100 120 V V(BR)EBO IEB=0.1mA 6 V ICBO VCE=10V 0.1 A VBEsat 1.2 Ic=500mA V IB=50mA VCEsat

 9.2. Size:118K  china
 3dg210.pdf pdf_icon

3DG2120

3DG210 NPN A B C PCM 1000 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 80 100 120 V V(BR)CEO ICE=0.1mA 60 80 100 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 1.0 A IEBO VEB=2V 0.1 A VBEsat

Datasheet: 3DG1959M , 3DG19A , 3DG2001 , 3DG2053 , 3DG2058S , 3DG2060 , 3DG210 , 3DG2102 , TIP41 , 3DG2216 , 3DG2216M , 3DG2218A , 3DG2219 , 3DG2222 , 3DG2222A , 3DG2229 , 3DG2230 .

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