3DG2274K Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG2274K
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92
3DG2274K Transistor Equivalent Substitute - Cross-Reference Search
3DG2274K Datasheet (PDF)
3dg2274k.pdf
2SC2274(3DG2274) 2SC2274K(3DG2274K) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency power amplifier applications. Features: High breakdown voltage, high current, low saturation voltage. /Absolute Maximum Ratings(Ta=25) Symbol R
3dg2274.pdf
2SC2274(3DG2274) 2SC2274K(3DG2274K) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency power amplifier applications. Features: High breakdown voltage, high current, low saturation voltage. /Absolute Maximum Ratings(Ta=25) Symbol R
br3dg227k.pdf
KSD227(BR3DG227K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features KSA642BR3CG642K Complement to KSA642(BR3CG642K),PC=400Mw. / Applications Low frequency power amplifier.
3dg2219.pdf
3DG2219(2N2219) NPN PCM TA=25 800 mW ICM 800 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB10A 75 V V(BR)CEO ICE10mA 40 V V(BR)EBO IEB10A 6.0 V ICBO VCB=60V 10 nA IEBO VCB=3.0V 10 nA IC=0.5A VCEsat 1.0 V IB=0.05A VCE=10V hFE 100~300 IC=0.15A
3dg2218a.pdf
3DG2218A NPN PCM TA=25 800 mW ICM 800 mA Tjm 175 Tstg -55~150 V(BR)CEO ICE=10mA 50 V V(BR)CBO ICB=10 A 75 V V(BR)EBO IEB=10 A 6 V ICEO VCE=50V 10 A ICBO VCB=60V 10 A IEBO VEB=6V 10 A VBEsat 2.0 V IC=500mA IB=5
3dg2216m.pdf
2SC2216M(3DG2216M) NPN /SILICON NPN TRANSISTOR : Purpose: TV final picture IF amplifier applications. :,h FEFeatures: High gain, good h linearity. FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EB
3dg2240.pdf
2SC2240(3DG2240) NPN /SILICON NPN TRANSISTOR : Purpose: Low noise audio amplifier applications. : ,, Features: Low noise, high DC current gain, high breakdown voltage. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V 120
3dg2235.pdf
2SC2235(3DG2235) NPN /SILICON NPN TRANSISTOR :, Purpose: Audio frequency amplifier and driver stage amplifier Applications. : 2SA965(3CG965)/Features: Complementary to 2SA965(3CG965). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 120 V CBO V 120 V
3dg2216.pdf
2SC2216(3DG2216) NPN /SILICON NPN TRANSISTOR : Purpose: TV final picture IF amplifier applications. :,h FEFeatures: High gain, good h linearity. FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EBO
3dg2222.pdf
2N2222(3DG2222) NPN /SILICON NPN TRANSISTOR : Purpose: General purpose amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 30 V CEO V 5.0 V EBO I 600 mA C P 625 mW CT 150 j T -55150 stg /Electrical characteristics(Ta
3dg2230.pdf
2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR :,/Purpose: High voltage general amplifier, color TV class B sound output applications. :V ,/Features: High voltage, high DC current gain. CEO /Absolute maximum ratings(Ta=25)
3dg2236.pdf
2SC2236(3DG2236) NPN /SILICON NPN TRANSISTOR :/Purpose: Audio frequency power amplifier applications. : 2SA966(3CG966) 3W /Features: Complementary to 2SA966(3CG966) And 3 watts output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V
3dg2222a.pdf
2N2222A(3DG2222A) NPN /SILICON NPN TRANSISTOR : Purpose: General purpose amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 75 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625 mW CT 150 j T -55150 stg /Electrical characteristics(
3dg2230a.pdf
2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR :,/Purpose: High voltage general amplifier, color TV class B sound output applications. :V ,/Features: High voltage, high DC current gain. CEO /Absolute maximum ratings(Ta=25)
3dg2229.pdf
2SC2229(3DG2229) NPN /SILICON NPN TRANSISTOR :, Purpose: TV video output,high voltage switching and driver stage of audio amplifier applications. :,, Features: High breakdown voltage, low output capacitance, high f . T/
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
