3DG2274K datasheet, аналоги, основные параметры
Наименование производителя: 3DG2274K 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.6 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 5 pf
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO92
📄📄 Копировать
Аналоги (замена) для 3DG2274K
- подборⓘ биполярного транзистора по параметрам
3DG2274K даташит
..1. Size:285K foshan
3dg2274k.pdf 
2SC2274(3DG2274) 2SC2274K(3DG2274K) NPN /SILICON NPN TRANSISTOR Purpose Low frequency power amplifier applications. Features High breakdown voltage, high current, low saturation voltage. /Absolute Maximum Ratings(Ta=25 ) Symbol R
7.1. Size:285K foshan
3dg2274.pdf 
2SC2274(3DG2274) 2SC2274K(3DG2274K) NPN /SILICON NPN TRANSISTOR Purpose Low frequency power amplifier applications. Features High breakdown voltage, high current, low saturation voltage. /Absolute Maximum Ratings(Ta=25 ) Symbol R
8.1. Size:451K blue-rocket-elect
br3dg227k.pdf 
KSD227(BR3DG227K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features KSA642 BR3CG642K Complement to KSA642(BR3CG642K),PC=400Mw. / Applications Low frequency power amplifier.
9.1. Size:109K china
3dg2219.pdf 
3DG2219(2N2219) NPN PCM TA=25 800 mW ICM 800 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB 10 A 75 V V(BR)CEO ICE 10mA 40 V V(BR)EBO IEB 10 A 6.0 V ICBO VCB=60V 10 nA IEBO VCB=3.0V 10 nA IC=0.5A VCEsat 1.0 V IB=0.05A VCE=10V hFE 100 300 IC=0.15A
9.2. Size:145K china
3dg2218a.pdf 
3DG2218A NPN PCM TA=25 800 mW ICM 800 mA Tjm 175 Tstg -55 150 V(BR)CEO ICE=10mA 50 V V(BR)CBO ICB=10 A 75 V V(BR)EBO IEB=10 A 6 V ICEO VCE=50V 10 A ICBO VCB=60V 10 A IEBO VEB=6V 10 A VBEsat 2.0 V IC=500mA IB=5
9.3. Size:372K foshan
3dg2216m.pdf 
2SC2216M(3DG2216M) NPN /SILICON NPN TRANSISTOR Purpose TV final picture IF amplifier applications. ,h FE Features High gain, good h linearity. FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EB
9.4. Size:173K lzg
3dg2240.pdf 
2SC2240(3DG2240) NPN /SILICON NPN TRANSISTOR Purpose Low noise audio amplifier applications. , , Features Low noise, high DC current gain, high breakdown voltage. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V 120
9.5. Size:367K lzg
3dg2235.pdf 
2SC2235(3DG2235) NPN /SILICON NPN TRANSISTOR , Purpose Audio frequency amplifier and driver stage amplifier Applications. 2SA965(3CG965) /Features Complementary to 2SA965(3CG965). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 120 V CBO V 120 V
9.6. Size:209K lzg
3dg2216.pdf 
2SC2216(3DG2216) NPN /SILICON NPN TRANSISTOR Purpose TV final picture IF amplifier applications. ,h FE Features High gain, good h linearity. FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EBO
9.7. Size:211K lzg
3dg2222.pdf 
2N2222(3DG2222) NPN /SILICON NPN TRANSISTOR Purpose General purpose amplifier. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 60 V CBO V 30 V CEO V 5.0 V EBO I 600 mA C P 625 mW C T 150 j T -55 150 stg /Electrical characteristics(Ta
9.8. Size:211K lzg
3dg2230.pdf 
2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR , /Purpose High voltage general amplifier, color TV class B sound output applications. V , /Features High voltage, high DC current gain. CEO /Absolute maximum ratings(Ta=25 )
9.9. Size:435K lzg
3dg2236.pdf 
2SC2236(3DG2236) NPN /SILICON NPN TRANSISTOR /Purpose Audio frequency power amplifier applications. 2SA966(3CG966) 3W /Features Complementary to 2SA966(3CG966) And 3 watts output applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V
9.10. Size:194K lzg
3dg2222a.pdf 
2N2222A(3DG2222A) NPN /SILICON NPN TRANSISTOR Purpose General purpose amplifier. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 75 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625 mW C T 150 j T -55 150 stg /Electrical characteristics(
9.11. Size:211K lzg
3dg2230a.pdf 
2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR , /Purpose High voltage general amplifier, color TV class B sound output applications. V , /Features High voltage, high DC current gain. CEO /Absolute maximum ratings(Ta=25 )
9.12. Size:219K lzg
3dg2229.pdf 
2SC2229(3DG2229) NPN /SILICON NPN TRANSISTOR , Purpose TV video output,high voltage switching and driver stage of audio amplifier applications. , , Features High breakdown voltage, low output capacitance, high f . T /
Другие транзисторы: 3DG2222A, 3DG2229, 3DG2230, 3DG2230A, 3DG2235, 3DG2236, 3DG2240, 3DG2274, S8050, 3DG2308, 3DG2383, 3DG2383T, 3DG2404, 3DG2411K, 3DG2412K, 3DG2413K, 3DG2458
