3DG2411K Specs and Replacement
Type Designator: 3DG2411K
SMD Transistor Code: HCP_HCQ_HCR
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 82
Package: SOT23
3DG2411K Substitution
- BJT ⓘ Cross-Reference Search
3DG2411K datasheet
2SC2411K(3DG2411K) NPN /SILICON NPN TRANSISTOR /Purpose Medium power amplifier applications. , , 2SA1036K(3CG1036K) Features Large I , low V ,complementary pair with the 2SA1036K(3CG1036K). C CE(sat) /Absolute maximum ratings(Ta=25 ) ... See More ⇒
2SC2413K(3DG2413K) NPN /SILICON NPN TRANSISTOR Applications High-frequency amplifier applications. , Features Low collector capacitance. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 40 V CBO V 25 V CEO V 5.0 V EBO I 50 mA ... See More ⇒
Detailed specifications: 3DG2236, 3DG2240, 3DG2274, 3DG2274K, 3DG2308, 3DG2383, 3DG2383T, 3DG2404, TIP31C, 3DG2412K, 3DG2413K, 3DG2458, 3DG2482, 3DG2482HA1, 3DG2500, 3DG2610, 3DG2655
Keywords - 3DG2411K pdf specs
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