All Transistors. 3DG2412K Datasheet

 

3DG2412K Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG2412K

SMD Transistor Code: HBQ_HBR_HBS

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT23

3DG2412K Transistor Equivalent Substitute - Cross-Reference Search

 

3DG2412K Datasheet (PDF)

1.1. 3dg2412k.pdf Size:229K _china

3DG2412K
3DG2412K

2SC2412K(3DG2412K) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于普通放大。 Purpose: General amplifier. 特点:共基极输出电容小。 Features: Low C ob. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 60 V CBO V 50 V CEO V 7.0 V EBO I 150 mA C P 200 mW C T 150 ℃ j T -55~150

4.1. 3dg2411k.pdf Size:313K _china

3DG2412K
3DG2412K

2SC2411K(3DG2411K) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于中功率放大。/Purpose: Medium power amplifier applications. 特点:集电极直流电流大,饱和压降低,与 2SA1036K(3CG1036K)互补。 Features: Large I , low V ,complementary pair with the 2SA1036K(3CG1036K). C CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位

4.2. 3dg2413k.pdf Size:405K _china

3DG2412K
3DG2412K

2SC2413K(3DG2413K) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于一般高频放大。 Applications: High-frequency amplifier applications. 特点: 共基极输出电容小,。 Features: Low collector capacitance. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 40 V CBO V 25 V CEO V 5.0 V EBO I 50 mA

Datasheet: D33D22 , D33D23 , D33D24 , D33D25 , D33D26 , D33D27 , D33D28 , D33D29 , 2SC945 , D33D30 , D33D4 , D33D5 , D33D6 , D33J21 , D33J22 , D33J23 , D33J24 .

 
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