All Transistors. 3DG2610 Datasheet


3DG2610 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG2610

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO92L

3DG2610 Transistor Equivalent Substitute - Cross-Reference Search


3DG2610 Datasheet (PDF)

1.1. 3dg2610.pdf Size:235K _china


2SC2610(3DG2610) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高电压增幅,电视视频输出。 Purpose: High voltage amplifier, TV video output. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 100 mA C P 800 mW C T 150 ℃ j T -55~150 ℃ stg 电性

5.1. 3dg2655.pdf Size:253K _china


2SC2655(3DG2655) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:功率放大,功率开关。/Purpose: Power amplifier and switching applications. 特点:饱和压降小,开关速度快,与 2SA1020(3CG1020)互补。/Features: Low saturation voltage, high speed switching time, complementary to 2SA1020(3CG1020). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数

5.2. 3dg2668.pdf Size:151K _china


2SC2668(3DG2668) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频放大,调频,射频,混频中放电路。 Purpose: High frequency amplifier, FM,RF,MIX IF amplifier applications. 特点:反向传输电容小,噪声系数低。 Features: Small reverse transfer capacitance, low noise figure. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

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