All Transistors. 3DG2655 Datasheet

 

3DG2655 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DG2655
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92L

 3DG2655 Transistor Equivalent Substitute - Cross-Reference Search

   

3DG2655 Datasheet (PDF)

 ..1. Size:253K  lzg
3dg2655.pdf

3DG2655 3DG2655

2SC2655(3DG2655) NPN /SILICON NPN TRANSISTOR :,/Purpose: Power amplifier and switching applications. :,, 2SA1020(3CG1020)/Features: Low saturation voltage, high speed switching time, complementary to 2SA1020(3CG1020). /Absolute maximum ratings(Ta=25)

 9.1. Size:151K  foshan
3dg2668.pdf

3DG2655 3DG2655

2SC2668(3DG2668) NPN /SILICON NPN TRANSISTOR :,,, Purpose: High frequency amplifier, FM,RF,MIX IF amplifier applications. :, Features: Small reverse transfer capacitance, low noise figure. /Absolute maximum ratings(Ta=25)

 9.2. Size:235K  lzg
3dg2610.pdf

3DG2655 3DG2655

2SC2610(3DG2610) NPN /SILICON NPN TRANSISTOR :, Purpose: High voltage amplifier, TV video output. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 100 mA C P 800 mW CT 150 j T -55150 stg

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: CHUMB6GP

 

 
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