3DG2710 Specs and Replacement
Type Designator: 3DG2710
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
3DG2710 Substitution
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3DG2710 datasheet
2SC2710(3DG2710) NPN /SILICON NPN TRANSISTOR Purpose Audio amplifier applications. , 2SA1150(3CG1150) Features High DC current gain, complementary pair with 2SA1150(3CG1150). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 35 V CBO ... See More ⇒
2SC2717(3DG2717) NPN /SILICON NPN TRANSISTOR /Purpose TV final picture IF amplifier applications. ,h /Features High gain, good linearity of h . FE FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I ... See More ⇒
2SC2717M(3DG2717M) NPN /SILICON NPN TRANSISTOR /Purpose TV final picture IF amplifier applications. ,h /Features High gain, good linearity of h . FE FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO ... See More ⇒
Detailed specifications: 3DG2482, 3DG2482HA1, 3DG2500, 3DG2610, 3DG2655, 3DG2668, 3DG27, 3DG2703, 2SC1815, 3DG2712, 3DG2714, 3DG2715, 3DG2717, 3DG2717M, 3DG2732, 3DG2734, 3DG2736
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