3DG2714 Specs and Replacement
Type Designator: 3DG2714
SMD Transistor Code: HQR_HQO_HQY
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 550 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: SOT23
3DG2714 Substitution
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3DG2714 datasheet
2SC2714(3DG2714) NPN /SILICON NPN TRANSISTOR /Purpose High frequency amplifier applications. , Features Small reverse transfer capacitance, low noise figure. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 40 V CBO V 30 V CEO V 4... See More ⇒
2SC2710(3DG2710) NPN /SILICON NPN TRANSISTOR Purpose Audio amplifier applications. , 2SA1150(3CG1150) Features High DC current gain, complementary pair with 2SA1150(3CG1150). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 35 V CBO ... See More ⇒
2SC2717(3DG2717) NPN /SILICON NPN TRANSISTOR /Purpose TV final picture IF amplifier applications. ,h /Features High gain, good linearity of h . FE FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I ... See More ⇒
2SC2717M(3DG2717M) NPN /SILICON NPN TRANSISTOR /Purpose TV final picture IF amplifier applications. ,h /Features High gain, good linearity of h . FE FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO ... See More ⇒
Detailed specifications: 3DG2500, 3DG2610, 3DG2655, 3DG2668, 3DG27, 3DG2703, 3DG2710, 3DG2712, A940, 3DG2715, 3DG2717, 3DG2717M, 3DG2732, 3DG2734, 3DG2736, 3DG2785, 3DG2786
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