All Transistors. 3DG2736 Datasheet

 

3DG2736 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG2736

SMD Transistor Code: HTC

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1400 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT23

3DG2736 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG2736 Datasheet (PDF)

1.1. 3dg2736.pdf Size:177K _china

3DG2736
3DG2736

2SC2736(3DG2736) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于超高频、特高频的频率转换,负载振荡器。 Purpose: UHF/VHF frequency converter, local oscillator. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30 V CBO V 20 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150 ℃ j T -55~

4.1. 3dg2734.pdf Size:141K _china

3DG2736
3DG2736

2SC2734(3DG2734) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于超高频频率转换,负载振荡器,宽频放大。 Purpose: UHF frequency converter, local oscillator,wide band amplifier. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 20 V CBO V 11 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150

4.2. 3dg2732.pdf Size:152K _china

3DG2736
3DG2736

2SC2732(3DG2732) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于超高频的频率转换。 Purpose: UHF frequency converter. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I 20 mA C P 150 mW C T 150 ℃ j T -55~150 ℃ stg 电性能参数/Electrical charact

Datasheet: 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

 
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