All Transistors. 3DG2812 Datasheet

 

3DG2812 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DG2812
   SMD Transistor Code: L4H_L5H_L6H_L7H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT23

 3DG2812 Transistor Equivalent Substitute - Cross-Reference Search

   

3DG2812 Datasheet (PDF)

 ..1. Size:305K  foshan
3dg2812.pdf

3DG2812
3DG2812

2SC2812(3DG2812) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency general-purpose amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 55 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 300 mA cp P 200 mW C T 150 j T -55150

 9.1. Size:373K  foshan
3dg2881a.pdf

3DG2812
3DG2812

2SC2881A(3DG2881A) NPN /SILICON NPN TRANSISTOR : Purpose: power amplifier applications. ,, 2SA1201A(3CG1201A) Features: High f , high V , small flat package, complementary pair with 2SA1201A(3CG1201A). T CEO/Absolute maximum ratings(Ta=25)

 9.2. Size:454K  foshan
3dg2881.pdf

3DG2812
3DG2812

2SC2881(3DG2881) NPN /SILICON NPN TRANSISTOR : Purpose: power amplifier applications. ,, 2SA1201(3CG1201) Features: High f , high V , small flat package, complementary pair with 2SA1201(3CG1201). T CEO/Absolute maximum ratings(Ta=25)

 9.3. Size:301K  foshan
3dg2884.pdf

3DG2812
3DG2812

2SC2884(3DG2884) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency amplifier applications. : h , 1W , 2SA1204(3CG1204) FE,Features: High h , for out stage of 1 watts amplifier, complementary to 2SA1204(3CG1204). FE/Absolute maximum ratings(Ta=25) Sym

 9.4. Size:200K  lzg
3dg2839.pdf

3DG2812
3DG2812

2SC2839(3DG2839) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency general amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 20 V CEO V 5.0 V EBO I 30 mA C P (Ta=25) 150 mW C T 150 j T -55150 stg

 9.5. Size:262K  lzg
3dg2873.pdf

3DG2812
3DG2812

2SC2873(3DG2873) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier and switching applications. : , 2SA1213(3CG1213) Features: Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SA1213(3CG1213).

 9.6. Size:264K  lzg
3dg2878.pdf

3DG2812
3DG2812

2SC2878(3DG2878) NPN /SILICON NPN TRANSISTOR :/Purpose: For muting and switching applications. :, /Features: High reverse h reverse: FEh =150(V =-2V,I =-2mA),low on resistance. FE CE C/Absolute maximum ratings(Ta=25) Symbol Rating

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3DD5017P

 

 
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