3DG2812 Specs and Replacement
Type Designator: 3DG2812
SMD Transistor Code: L4H_L5H_L6H_L7H
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: SOT23
3DG2812 Substitution
- BJT ⓘ Cross-Reference Search
3DG2812 datasheet
2SC2812(3DG2812) NPN /SILICON NPN TRANSISTOR Purpose Low frequency general-purpose amplifier applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 55 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 300 mA cp P 200 mW C T 150 j T -55 150 ... See More ⇒
2SC2884(3DG2884) NPN /SILICON NPN TRANSISTOR Purpose Audio frequency amplifier applications. h , 1W , 2SA1204(3CG1204) FE, Features High h , for out stage of 1 watts amplifier, complementary to 2SA1204(3CG1204). FE /Absolute maximum ratings(Ta=25 ) Sym... See More ⇒
Detailed specifications: 3DG2715, 3DG2717, 3DG2717M, 3DG2732, 3DG2734, 3DG2736, 3DG2785, 3DG2786, TIP127, 3DG2839, 3DG2873, 3DG2878, 3DG2881, 3DG2881A, 3DG2884, 3DG2909, 3DG2999
Keywords - 3DG2812 pdf specs
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History: 3DG2703
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