All Transistors. 3DG2884 Datasheet

 

3DG2884 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG2884

SMD Transistor Code: HPO_HPY

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT89

3DG2884 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG2884 Datasheet (PDF)

1.1. 3dg2884.pdf Size:301K _china

3DG2884
3DG2884

2SC2884(3DG2884) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频放大。 Purpose: Audio frequency amplifier applications. 特点:高 h ,可得 1W 输出,与 2SA1204(3CG1204)互补。 FE, Features: High h , for out stage of 1 watts amplifier, complementary to 2SA1204(3CG1204). FE 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Sym

4.1. 3dg2881.pdf Size:454K _china

3DG2884
3DG2884

2SC2881(3DG2881) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于一般功率放大。 Purpose: power amplifier applications. 特点:特征频率高,电压高,封装小, 与 2SA1201(3CG1201)互补。 Features: High f , high V , small flat package, complementary pair with 2SA1201(3CG1201). T CEO 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值

4.2. 3dg2881a.pdf Size:373K _china

3DG2884
3DG2884

2SC2881A(3DG2881A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于一般功率放大。 Purpose: power amplifier applications. 特点:特征频率高,电压高,封装小, 与 2SA1201A(3CG1201A)互补。 Features: High f , high V , small flat package, complementary pair with 2SA1201A(3CG1201A). T CEO 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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