All Transistors. 3DG2884 Datasheet

 

3DG2884 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DG2884
   SMD Transistor Code: HPO_HPY
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89

 3DG2884 Transistor Equivalent Substitute - Cross-Reference Search

   

3DG2884 Datasheet (PDF)

 ..1. Size:301K  foshan
3dg2884.pdf

3DG2884
3DG2884

2SC2884(3DG2884) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency amplifier applications. : h , 1W , 2SA1204(3CG1204) FE,Features: High h , for out stage of 1 watts amplifier, complementary to 2SA1204(3CG1204). FE/Absolute maximum ratings(Ta=25) Sym

 8.1. Size:373K  foshan
3dg2881a.pdf

3DG2884
3DG2884

2SC2881A(3DG2881A) NPN /SILICON NPN TRANSISTOR : Purpose: power amplifier applications. ,, 2SA1201A(3CG1201A) Features: High f , high V , small flat package, complementary pair with 2SA1201A(3CG1201A). T CEO/Absolute maximum ratings(Ta=25)

 8.2. Size:454K  foshan
3dg2881.pdf

3DG2884
3DG2884

2SC2881(3DG2881) NPN /SILICON NPN TRANSISTOR : Purpose: power amplifier applications. ,, 2SA1201(3CG1201) Features: High f , high V , small flat package, complementary pair with 2SA1201(3CG1201). T CEO/Absolute maximum ratings(Ta=25)

 9.1. Size:305K  foshan
3dg2812.pdf

3DG2884
3DG2884

2SC2812(3DG2812) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency general-purpose amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 55 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 300 mA cp P 200 mW C T 150 j T -55150

 9.2. Size:200K  lzg
3dg2839.pdf

3DG2884
3DG2884

2SC2839(3DG2839) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency general amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 20 V CEO V 5.0 V EBO I 30 mA C P (Ta=25) 150 mW C T 150 j T -55150 stg

 9.3. Size:262K  lzg
3dg2873.pdf

3DG2884
3DG2884

2SC2873(3DG2873) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier and switching applications. : , 2SA1213(3CG1213) Features: Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SA1213(3CG1213).

 9.4. Size:264K  lzg
3dg2878.pdf

3DG2884
3DG2884

2SC2878(3DG2878) NPN /SILICON NPN TRANSISTOR :/Purpose: For muting and switching applications. :, /Features: High reverse h reverse: FEh =150(V =-2V,I =-2mA),low on resistance. FE CE C/Absolute maximum ratings(Ta=25) Symbol Rating

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 3DG112 | CV7064

 

 
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