All Transistors. 3DG302 Datasheet

 

3DG302 Datasheet and Replacement


   Type Designator: 3DG302
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO18
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3DG302 Datasheet (PDF)

 ..1. Size:118K  china
 3dg302.pdf pdf_icon

3DG302

3DG302 NPN A B C PCM 800 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 120 140 V V(BR)CEO ICE=0.1mA 80 100 120 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=2V 0.5 A VBEsat 1.0 IC=200mA

 0.1. Size:718K  jilin sino
 3dg3020.pdf pdf_icon

3DG302

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DG3020 MAIN CHARACTERISTICS Package I 1.5A CV 450V CEOP (TO-92) 1W CP (IPAK) 10W CP (TO-126/DPAK) 20W C APPLICATIONS TO-92-FJ TO-126 Battery charger Electronic ballasts High

 0.2. Size:178K  crhj
 3dg3020a1.pdf pdf_icon

3DG302

NPN R 3DG3020 A1 3DG3020 A1 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W

 0.3. Size:111K  china
 3dg3020.pdf pdf_icon

3DG302

3DG3020 NPN A B C PCM TA=25 800 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 120 140 V V(BR)CEO ICE=0.1mA 80 100 120 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=2V 0.5 A VBEsat 1.0 I

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History: AC122V | 2SB1188SQ-R | 2SC5890 | 3DF5 | MJD45H11T4 | DTA144WET1G | 3DG2274K

Keywords - 3DG302 transistor datasheet

 3DG302 cross reference
 3DG302 equivalent finder
 3DG302 lookup
 3DG302 substitution
 3DG302 replacement

 

 
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