3DG302 Specs and Replacement
Type Designator: 3DG302
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3DG302 Substitution
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3DG302 datasheet
3DG302 NPN A B C PCM 800 mW ICM 1000 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 100 120 140 V V(BR)CEO ICE=0.1mA 80 100 120 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=2V 0.5 A VBEsat 1.0 IC=200mA ... See More ⇒
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DG3020 MAIN CHARACTERISTICS Package I 1.5A C V 450V CEO P (TO-92) 1W C P (IPAK) 10W C P (TO-126/DPAK) 20W C APPLICATIONS TO-92-FJ TO-126 Battery charger Electronic ballasts High ... See More ⇒
NPN R 3DG3020 A1 3DG3020 A1 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W ... See More ⇒
3DG3020 NPN A B C PCM TA=25 800 mW ICM 1000 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 100 120 140 V V(BR)CEO ICE=0.1mA 80 100 120 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=2V 0.5 A VBEsat 1.0 I... See More ⇒
Detailed specifications: 3DG2839 , 3DG2873 , 3DG2878 , 3DG2881 , 3DG2881A , 3DG2884 , 3DG2909 , 3DG2999 , 2SC945 , 3DG3020 , 3DG3020A1 , 3DG3130 , 3DG3137 , 3DG3142 , 3DG3326 , 3DG3330 , 3DG3332 .
Keywords - 3DG302 pdf specs
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