All Transistors. 3DG3020A1 Datasheet

 

3DG3020A1 Datasheet and Replacement


   Type Designator: 3DG3020A1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO92
 

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3DG3020A1 Datasheet (PDF)

 ..1. Size:178K  crhj
 3dg3020a1.pdf pdf_icon

3DG3020A1

NPN R 3DG3020 A1 3DG3020 A1 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W

 ..2. Size:176K  wuxi china
 3dg3020a1.pdf pdf_icon

3DG3020A1

NPN R 3DG3020 A1 3DG3020 A1 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W

 7.1. Size:718K  jilin sino
 3dg3020.pdf pdf_icon

3DG3020A1

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DG3020 MAIN CHARACTERISTICS Package I 1.5A CV 450V CEOP (TO-92) 1W CP (IPAK) 10W CP (TO-126/DPAK) 20W C APPLICATIONS TO-92-FJ TO-126 Battery charger Electronic ballasts High

 7.2. Size:111K  china
 3dg3020.pdf pdf_icon

3DG3020A1

3DG3020 NPN A B C PCM TA=25 800 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 120 140 V V(BR)CEO ICE=0.1mA 80 100 120 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=2V 0.5 A VBEsat 1.0 I

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Datasheet: 3DG2878 , 3DG2881 , 3DG2881A , 3DG2884 , 3DG2909 , 3DG2999 , 3DG302 , 3DG3020 , 2N4401 , 3DG3130 , 3DG3137 , 3DG3142 , 3DG3326 , 3DG3330 , 3DG3332 , 3DG3355 , 3DG3356 .

History: RN2303 | BFG590 | D45H3

Keywords - 3DG3020A1 transistor datasheet

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