All Transistors. 3DG3020A1 Datasheet

 

3DG3020A1 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG3020A1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO92

3DG3020A1 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG3020A1 Datasheet (PDF)

1.1. 3dg3020a1.pdf Size:178K _china

3DG3020A1
3DG3020A1

硅三重扩散 NPN 双极型晶体管 R ○ 3DG3020 A1 产品概述 特征参数 产品特点 ● 开关损耗低 3DG3020 A1 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 VCEO 450 V 型功率开关晶体管, 该产品 ● 高温特性好 IC 1.5 A 采用平面工艺, 分压环终端 ● 合适的开关速度 Ptot (Ta=25℃) 0.8 W 结构

3.1. 3dg3020.pdf Size:111K _china

3DG3020A1

3DG3020 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C PCM TA=25℃ 800 mW ICM 1000 mA Tjm 175 ℃ Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥100 ≥120 ≥140 V V(BR)CEO ICE=0.1mA ≥80 ≥100 ≥120 V 极 V(BR)EBO IEB=0.1mA ≥6.0 V 限 ICBO VCB=20V ≤0.5 μA 值 ICEO VCE=20V ≤1.0 μA IEBO VEB=2V ≤0.5 μA VBEsat ≤1.0 I

 4.1. 3dg302.pdf Size:118K _china

3DG3020A1

3DG302 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C PCM 800 mW ICM 1000 mA Tjm 175 ℃ Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥100 ≥120 ≥140 V V(BR)CEO ICE=0.1mA ≥80 ≥100 ≥120 V 极 V(BR)EBO IEB=0.1mA ≥6.0 V 限 ICBO VCB=20V ≤0.5 μA 值 ICEO VCE=20V ≤1.0 μA IEBO VEB=2V ≤0.5 μA VBEsat ≤1.0 IC=200mA

Datasheet: 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

 
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