All Transistors. 3DG3357 Datasheet

 

3DG3357 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG3357

SMD Transistor Code: HRH_HRF_HRE_HRG

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 6500 MHz

Collector Capacitance (Cc): 0.65 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT89

3DG3357 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG3357 Datasheet (PDF)

1.1. 3dg3357.pdf Size:202K _china

3DG3357
3DG3357

2SC3357(3DG3357) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 用于甚高频、超高频和有线电视频段的低噪声放大。 Purpose: low noise amplifier at VHF, UHF and CATV band applications. 特点:低噪声,高增益,小封装功耗大。 Features: Low noise and high gain, large P in small package. C 极限参数/Absolute maximum ratings(Ta=25℃) 参数符

4.1. 3dg3355.pdf Size:174K _china

3DG3357
3DG3357

2SC3355(3DG3355) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 用于甚高频、超高频和有线电视频段的低噪声放大。 Purpose: low noise amplifier at VHF, UHF and CATV band applications. 特点:低噪声和高功率增益。 Features: Low noise and high power gain. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating U

4.2. 3dg3356.pdf Size:161K _china

3DG3357
3DG3357

2SC3356(3DG3356) 硅 NPN 半导体三极管/SILION NPN TRANSISTOR 用途:用于甚高频、超高频和有线电视频段的低噪声放大。 Purpose: low noise amplifier at VHF, UHF and CATV band applications. 特点:低噪声和高功率增益。 Features: Low noise and high power gain. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Uni

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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