3DG383TM Specs and Replacement
Type Designator: 3DG383TM
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO92
3DG383TM Substitution
- BJT ⓘ Cross-Reference Search
3DG383TM datasheet
2SC383TM(3DG383TM) NPN /SILICON NPN TRANSISTOR Purpose TV final picture IF amplifier applications. G =33dB( )(f=45MHz),h pe FE Features High gain G =33dB(Typ)(f=45MHz),good linearity of h . pe FE /Absolute Maximum Ratings(Ta=25 ) Symbol R... See More ⇒
2SC3838K(3DG3838K) NPN /SILICON NPN TRANSISTOR , Features High f small NF. T, /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 20 V CBO V 11 V CEO V 3.0 V EBO I 50 mA C P 200 mW C T 150 j T -55 150 stg /Electrical charac... See More ⇒
2SC3841(3DG3841) NPN /SILICON NPN TRANSISTOR Purpose For use as UHF oscillator and a UHF mixer in a turner of a TV receiver. - Features High f ,low collector to base time constant, low output capacita... See More ⇒
2SC380TM(3DG380TM) NPN /SILICON NPN TRANSISTOR Purpose High frequency amplifier applications. G =29dB( )(f=10.7MHz) pe Features High power Gain G =29dB(Typ.)(f=10.7MHz). pe /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 35 V V 30 V ... See More ⇒
Detailed specifications: 3DG3439, 3DG3440, 3DG3478, 3DG3545, 3DG3648, 3DG3779, 3DG380TM, 3DG3838K, BC547B, 3DG3841, 3DG388ATM, 3DG3904, 3DG4, 3DG4003, 3DG4081, 3DG4081W, 3DG4097
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