3DG383TM Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG383TM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO92
3DG383TM Transistor Equivalent Substitute - Cross-Reference Search
3DG383TM Datasheet (PDF)
3dg383tm.pdf
2SC383TM(3DG383TM) NPN /SILICON NPN TRANSISTOR : Purpose:TV final picture IF amplifier applications. ::G =33dB()(f=45MHz),h pe FEFeatures:High gain: G =33dB(Typ)(f=45MHz),good linearity of h . pe FE/Absolute Maximum Ratings(Ta=25) Symbol R
3dg3838k.pdf
2SC3838K(3DG3838K) NPN /SILICON NPN TRANSISTOR :, Features: High f small NF. T, /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 20 V CBO V 11 V CEO V 3.0 V EBO I 50 mA C P 200 mW C T 150 j T -55150 stg /Electrical charac
3dg3841.pdf
2SC3841(3DG3841) NPN /SILICON NPN TRANSISTOR : Purpose: For use as UHF oscillator and a UHF mixer in a turner of a TV receiver. :- Features: High f ,low collector to base time constant, low output capacita
3dg380tm.pdf
2SC380TM(3DG380TM) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency amplifier applications. ::G =29dB()(f=10.7MHz) peFeatures: High power Gain: G =29dB(Typ.)(f=10.7MHz). pe/Absolute Maximum Ratings(Ta=25) Symbol Rating Unit VCBO 35 V V 30 V
3dg388atm.pdf
2SC388ATM(3DG388ATM) NPN /SILICON NPN TRANSISTOR : Purpose: TV final picture IF amplifier applications. ::G =33dB()(f=45MHz),h pe FEFeatures: High gain: G =33dB(Typ)(f=45MHz),good linearity of h . pe FE/Absolute Maximum Ratings(Ta=25) Symb
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
