All Transistors. 3DG4081W Datasheet

 

3DG4081W Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG4081W

SMD Transistor Code: HBQ_HBR_HBS

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT323

3DG4081W Transistor Equivalent Substitute - Cross-Reference Search

 

3DG4081W Datasheet (PDF)

1.1. 3dg4081w.pdf Size:206K _china

3DG4081W
3DG4081W

2SC4081W(3DG4081W) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于普通放大。 Purpose: General amplifier. 特点:共基极输出电容小。 Features: Low C ob. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 60 V CBO V 50 V CEO V 7.0 V EBO I 150 mA C P 200 mW C T 150 ℃ j T -55~150

3.1. 3dg4081.pdf Size:215K _china

3DG4081W
3DG4081W

2SC4081(3DG4081) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于普通放大。 Purpose: General amplifier. 特点:共基极输出电容小。 Features: Low C ob. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 60 V CBO V 50 V CEO V 7.0 V EBO I 150 mA C P 200 mW C T 150 ℃ j T -55~150 ℃

 5.1. 3dg40005 as-h.pdf Size:144K _crhj

3DG4081W
3DG4081W

硅 NPN 双极型晶体管 R ○ 3DG40005 AS-H 产品概述 特征参数 产品特点 3DG40005 AS-H 是硅 ● 高 EB 阻断电压 符 号 额定值 单 位 (VEBO>20V) NPN 型功率开关晶体管, VCEO 400 V IC 50 mA 该产品采用平面工艺,硅 ● 高电压、大 hFE ● 高温特性好 Ptot (Ta=25℃) 0.3 W 重掺杂衬底材料,深基区 ●

5.2. 3dg4097.pdf Size:279K _china

3DG4081W
3DG4081W

2SC4097(3DG4097) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power transistor. 特点:共基极输出电容小,与 2SA1577(3CG1577)互补。 Features: Low C , complements the 2SA1577(3CG1577). ob 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 40 V CBO V 32 V CEO V 5.0

 5.3. 3dg4003.pdf Size:256K _china

3DG4081W
3DG4081W

2SC4003(3DG4003) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于高压驱动。 Purpose: High voltage driver applications. 特点:高击穿电压,极好的放大线性,芯片采用 MBIT 技术。 Features:High breakdown voltage, adoption of MBIT process excellent h linearity. FE 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
Back to Top

 


3DG4081W
  3DG4081W
  3DG4081W
  3DG4081W
 

social 

LIST

Last Update

BJT: 2SA1897 | KRC664E | KRC663E | SMUN5335DW | MP1526 | 3DD5287 | E3150 | 3DD2499 | 3DD4212DT | 2SC9014 | US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA |

 

 

 
Back to Top