3DG42 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG42
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT23
3DG42 Transistor Equivalent Substitute - Cross-Reference Search
3DG42 Datasheet (PDF)
..1. Size:109K china
3dg42.pdf
3dg42.pdf
3DG42 NPN PCM TA=25 300 mW ICM 500 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1A 300 V V(BR)CEO ICE=1.0mA 300 V V(BR)EBO IEB=0.1A 6.0 V ICBO VCB=200V 100 nA IEBO VEB=6V 100 nA VBEsat IC=20mA 0.5 V IB=2mA VCEsat 0.9 VCE=10V hFE 40 IC=10mA
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N3830L | BDY60 | MPS4401
