All Transistors. 3DG42 Datasheet

 

3DG42 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG42

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT23

3DG42 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG42 Datasheet (PDF)

1.1. 3dg42.pdf Size:109K _china

3DG42

3DG42 型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 300 mW ICM 500 mA Tjm 175 ℃ Tstg -55~150 ℃ V(BR)CBO ICB=0.1A ≥300 V V(BR)CEO ICE=1.0mA ≥300 V 极 限 V(BR)EBO IEB=0.1A ≥6.0 V 值 ICBO VCB=200V ≤100 nA IEBO VEB=6V ≤100 nA VBEsat IC=20mA ≤0.5 V IB=2mA VCEsat ≤0.9 VCE=10V hFE ≥40 IC=10mA

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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