3DG6 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO92 SOT23 TO18
3DG6 Transistor Equivalent Substitute - Cross-Reference Search
3DG6 Datasheet (PDF)
3dg6.pdf
3DG6 NPN A B C D PCM 100 mW ICM 20 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 30 45 45 45 V V(BR)CEO ICE=0.1mA 15 20 20 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 0.01 A ICEO VCE=10V 0.1 0.01 A IEBO VEB=1.5V
3dg639.pdf
3DG639 NPN PCM TA=25 830 mW ICM 1.5 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 V V(BR)CEO ICE=0.1mA 80 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A VBEsat 1.0 IC=500mA V IB=50mA VCEsat 0.5 VCE=2V
3dg6520.pdf
2N6520(3DG6520) PNP /SILICON PNP TRANSISTOR :/Purpose: High voltage control circuit application. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -350 V CBO V -350 V CEO V -5.0 V EBO I -500 mA C I -250 mA B P 625 mW CT 150 j T -55150 stg
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
