3DG6 Specs and Replacement
Type Designator: 3DG6
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
3DG6 Substitution
- BJT ⓘ Cross-Reference Search
3DG6 datasheet
3DG639 NPN PCM TA=25 830 mW ICM 1.5 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 100 V V(BR)CEO ICE=0.1mA 80 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A VBEsat 1.0 IC=500mA V IB=50mA VCEsat 0.5 VCE=2V... See More ⇒
Detailed specifications: 3DG512C, 3DG531, 3DG535, 3DG536KM, 3DG536M, 3DG5401, 3DG5551, 3DG5770, 2N5551, 3DG639, 3DG6520, 3DG718A, 3DG720, 3DG752TM, 3DG8, 3DG8050, 3DG8050A
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