All Transistors. 3DG6 Datasheet

 

3DG6 Datasheet and Replacement


   Type Designator: 3DG6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO92 SOT23 TO18
 

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3DG6 Datasheet (PDF)

 ..1. Size:128K  china
 3dg6.pdf pdf_icon

3DG6

3DG6 NPN A B C D PCM 100 mW ICM 20 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 30 45 45 45 V V(BR)CEO ICE=0.1mA 15 20 20 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 0.01 A ICEO VCE=10V 0.1 0.01 A IEBO VEB=1.5V

 0.1. Size:121K  china
 3dg639.pdf pdf_icon

3DG6

3DG639 NPN PCM TA=25 830 mW ICM 1.5 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 V V(BR)CEO ICE=0.1mA 80 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A VBEsat 1.0 IC=500mA V IB=50mA VCEsat 0.5 VCE=2V

 0.2. Size:366K  lzg
 3dg6520.pdf pdf_icon

3DG6

2N6520(3DG6520) PNP /SILICON PNP TRANSISTOR :/Purpose: High voltage control circuit application. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -350 V CBO V -350 V CEO V -5.0 V EBO I -500 mA C I -250 mA B P 625 mW CT 150 j T -55150 stg

Datasheet: 3DG512C , 3DG531 , 3DG535 , 3DG536KM , 3DG536M , 3DG5401 , 3DG5551 , 3DG5770 , AC125 , 3DG639 , 3DG6520 , 3DG718A , 3DG720 , 3DG752TM , 3DG8 , 3DG8050 , 3DG8050A .

History: TD13005 | CTP1033 | 3CA1370 | 2SA505O | DTC123YKAFRA | 2SC979 | MP506

Keywords - 3DG6 transistor datasheet

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