2N912 Datasheet. Specs and Replacement
Type Designator: 2N912
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO18
2N912 Substitution
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2N912 datasheet
The documentation and process conversion measures INCH-POUND necessary to comply with this amendment shall be completed by 6 June 2001. MIL-S-19500/274C AMENDMENT 1 6 March 2001 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, NPN, SILICON, TRANSISTORS TYPES 2N910, 2N910S, 2N911, 2N911S, 2N912, AND 2N912S, JAN AND JANTX Inactive for new design after 7 June 1999. This amendment forms a par... See More ⇒
Detailed specifications: 2N905, 2N906, 2N907, 2N908, 2N909, 2N91, 2N910, 2N911, BDT88, 2N913, 2N914, 2N914-46, 2N914-51, 2N914A, 2N915, 2N915A, 2N916
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