All Transistors. 2N912 Datasheet

 

2N912 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N912
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO18

 2N912 Transistor Equivalent Substitute - Cross-Reference Search

   

2N912 Datasheet (PDF)

 0.1. Size:8K  no
 2n910-s 2n911-s 2n912-s.pdf

2N912 2N912

The documentation and process conversion measuresINCH-POUNDnecessary to comply with this amendment shall becompleted by 6 June 2001. MIL-S-19500/274CAMENDMENT 16 March 2001MILITARY SPECIFICATIONSEMICONDUCTOR DEVICE, NPN, SILICON, TRANSISTORSTYPES 2N910, 2N910S, 2N911, 2N911S, 2N912, AND 2N912S, JAN AND JANTXInactive for new design after 7 June 1999.This amendment forms a par

Datasheet: 2N905 , 2N906 , 2N907 , 2N908 , 2N909 , 2N91 , 2N910 , 2N911 , BC547 , 2N913 , 2N914 , 2N914-46 , 2N914-51 , 2N914A , 2N915 , 2N915A , 2N916 .

 

 
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