All Transistors. 3DG639 Datasheet

 

3DG639 Datasheet and Replacement


   Type Designator: 3DG639
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.83 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92 SOT23 TO18
 

 3DG639 Substitution

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3DG639 Datasheet (PDF)

 ..1. Size:121K  china
 3dg639.pdf pdf_icon

3DG639

3DG639 NPN PCM TA=25 830 mW ICM 1.5 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 V V(BR)CEO ICE=0.1mA 80 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A VBEsat 1.0 IC=500mA V IB=50mA VCEsat 0.5 VCE=2V

Datasheet: 3DG531 , 3DG535 , 3DG536KM , 3DG536M , 3DG5401 , 3DG5551 , 3DG5770 , 3DG6 , 2N5401 , 3DG6520 , 3DG718A , 3DG720 , 3DG752TM , 3DG8 , 3DG8050 , 3DG8050A , 3DG8050M .

History: TMPA812M3 | HBA1873S5 | 2SD848A | 2SB333H | BCP51-10 | BRT60 | 2SC2174

Keywords - 3DG639 transistor datasheet

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