3DG639 PDF and Equivalents Search

 

3DG639 Specs and Replacement

Type Designator: 3DG639

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.83 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92 SOT23 TO18

 3DG639 Substitution

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3DG639 datasheet

 ..1. Size:121K  china

 3dg639.pdf pdf_icon

3DG639

3DG639 NPN PCM TA=25 830 mW ICM 1.5 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 100 V V(BR)CEO ICE=0.1mA 80 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A VBEsat 1.0 IC=500mA V IB=50mA VCEsat 0.5 VCE=2V... See More ⇒

Detailed specifications: 3DG531, 3DG535, 3DG536KM, 3DG536M, 3DG5401, 3DG5551, 3DG5770, 3DG6, C945, 3DG6520, 3DG718A, 3DG720, 3DG752TM, 3DG8, 3DG8050, 3DG8050A, 3DG8050M

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