3DG6520 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG6520
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO92
3DG6520 Transistor Equivalent Substitute - Cross-Reference Search
3DG6520 Datasheet (PDF)
..1. Size:366K lzg
3dg6520.pdf
3dg6520.pdf
2N6520(3DG6520) PNP /SILICON PNP TRANSISTOR :/Purpose: High voltage control circuit application. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -350 V CBO V -350 V CEO V -5.0 V EBO I -500 mA C I -250 mA B P 625 mW CT 150 j T -55150 stg
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
