All Transistors. 3DG6520 Datasheet

 

3DG6520 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG6520

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO92

3DG6520 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG6520 Datasheet (PDF)

1.1. 3dg6520.pdf Size:366K _china

3DG6520
3DG6520

2N6520(3DG6520) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于高压控制电路。/Purpose: High voltage control circuit application. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -350 V CBO V -350 V CEO V -5.0 V EBO I -500 mA C I -250 mA B P 625 mW C T 150 ℃ j T -55~150 ℃ stg 电

Datasheet: D33D3 , D33D30 , D33D4 , D33D5 , D33D6 , D33J21 , D33J22 , D33J23 , TIP122 , D33J25 , D33J26 , D33J27 , D33J28 , D33J29 , D33J30 , D33K1 , D33K2 .

 
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