All Transistors. 3DG6520 Datasheet

 

3DG6520 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG6520

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO92

3DG6520 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG6520 Datasheet (PDF)

1.1. 3dg6520.pdf Size:366K _china

3DG6520
3DG6520

2N6520(3DG6520) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于高压控制电路。/Purpose: High voltage control circuit application. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -350 V CBO V -350 V CEO V -5.0 V EBO I -500 mA C I -250 mA B P 625 mW C T 150 ℃ j T -55~150 ℃ stg 电

Datasheet: 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .

 
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