3DG6520 Specs and Replacement
Type Designator: 3DG6520
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO92
3DG6520 Substitution
- BJT ⓘ Cross-Reference Search
3DG6520 datasheet
Detailed specifications: 3DG535 , 3DG536KM , 3DG536M , 3DG5401 , 3DG5551 , 3DG5770 , 3DG6 , 3DG639 , C1815 , 3DG718A , 3DG720 , 3DG752TM , 3DG8 , 3DG8050 , 3DG8050A , 3DG8050M , 3DG8051 .
History: 2SD1435
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