3DG8050M Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG8050M
SMD Transistor Code: HY3B_HY3C_HY3D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: SOT23
3DG8050M Transistor Equivalent Substitute - Cross-Reference Search
3DG8050M Datasheet (PDF)
3dg8050m.pdf
S8050M(3DG8050M) NPN /SILICON NPN TRANSISTOR :/Purpose: Power amplifier applications. : S8550M(3CG8550M)/Features: Complementary pair with S8550M(3CG8550M). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 40 V CBO V 25 V CEO V 6.0 V EBO I 800 mA C
3dg8050.pdf
NPN NPN EPITAXIAL SILICON TRANSISTOR R3DG8050 MAIN CHARACTERISTICS Package I 1.5A CV 25V CEOP 1W C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit TO-92
3dg8050.pdf
3DG8050 NPN PCM TA=25 330 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB0.1mA 30 V V(BR)CEO ICE0.1mA 25 V V(BR)EBO IEB0.1mA 6.0 V ICBO VCB=20V 0.1 A VBEsat 1.2 V IC=50mA IB=5mA VCEsat 0.5 V VCE=1V hFE 20~100 IC=0.
3dg8050a.pdf
S8050A(3DG8050A) NPN /SILICON NPN TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , S8550A(3CG8550A) C CFeatures: High P ,I , complementary pair with S8550A(3CG8550A). C C/Absolute maximum ratings(Ta=25) Symbol Rating
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N3817A
