All Transistors. 3DG8050M Datasheet

 

3DG8050M Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG8050M

SMD Transistor Code: HY3B_HY3C_HY3D

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.45 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 9 pF

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: SOT23

3DG8050M Transistor Equivalent Substitute - Cross-Reference Search

 

3DG8050M Datasheet (PDF)

1.1. 3dg8050m.pdf Size:281K _china

3DG8050M
3DG8050M

S8050M(3DG8050M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于功率放大电路。/Purpose: Power amplifier applications. 特点:与 S8550M(3CG8550M)互补。/Features: Complementary pair with S8550M(3CG8550M). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 40 V CBO V 25 V CEO V 6.0 V EBO I 800 mA C

3.1. 3dg8050.pdf Size:120K _china

3DG8050M

3DG8050 型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 330 mW 极 ICM 300 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥30 V V(BR)CEO ICE=0.1mA ≥25 V V(BR)EBO IEB=0.1mA ≥6.0 V 直 ICBO VCB=20V ≤0.1 μA 流 参 VBEsat ≤1.2 V IC=50mA 数 IB=5mA VCEsat ≤0.5 V VCE=1V hFE 20~100 IC=0.

3.2. 3dg8050a.pdf Size:189K _china

3DG8050M
3DG8050M

S8050A(3DG8050A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于乙类推挽功放。 Purpose: Amplifier of portable radios in class B push-pull operation. 特点:P 、I 大,与 S8550A(3CG8550A)互补。 C C Features: High P ,I , complementary pair with S8550A(3CG8550A). C C 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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