3DG8050M Specs and Replacement
Type Designator: 3DG8050M
SMD Transistor Code: HY3B_HY3C_HY3D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Package: SOT23
3DG8050M Substitution
- BJT ⓘ Cross-Reference Search
3DG8050M datasheet
S8050M(3DG8050M) NPN /SILICON NPN TRANSISTOR /Purpose Power amplifier applications. S8550M(3CG8550M) /Features Complementary pair with S8550M(3CG8550M). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 40 V CBO V 25 V CEO V 6.0 V EBO I 800 mA C ... See More ⇒
3DG8050 NPN PCM TA=25 330 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB 0.1mA 30 V V(BR)CEO ICE 0.1mA 25 V V(BR)EBO IEB 0.1mA 6.0 V ICBO VCB=20V 0.1 A VBEsat 1.2 V IC=50mA IB=5mA VCEsat 0.5 V VCE=1V hFE 20 100 IC=0.... See More ⇒
S8050A(3DG8050A) NPN /SILICON NPN TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , S8550A(3CG8550A) C C Features High P ,I , complementary pair with S8550A(3CG8550A). C C /Absolute maximum ratings(Ta=25 ) Symbol Rating ... See More ⇒
Detailed specifications: 3DG639, 3DG6520, 3DG718A, 3DG720, 3DG752TM, 3DG8, 3DG8050, 3DG8050A, S8050, 3DG8051, 3DG817, 3DG82, 3DG847B, 3DG9013, 3DG9014, 3DG930, 3DG945
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