3DG82 Specs and Replacement
Type Designator: 3DG82
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1200 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3DG82 Substitution
- BJT ⓘ Cross-Reference Search
3DG82 datasheet
3DG82 NPN A B C PCM 500 mW ICM 100 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 30 30 40 V V(BR)CEO ICE=0.1mA 20 20 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 1.0 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A VBEsat 1... See More ⇒
Detailed specifications: 3DG720 , 3DG752TM , 3DG8 , 3DG8050 , 3DG8050A , 3DG8050M , 3DG8051 , 3DG817 , A1015 , 3DG847B , 3DG9013 , 3DG9014 , 3DG930 , 3DG945 , 3DG945M , 3DK001 , 3DK002 .
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