All Transistors. 3DG82 Datasheet

 

3DG82 Datasheet and Replacement


   Type Designator: 3DG82
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO18
 

 3DG82 Substitution

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3DG82 Datasheet (PDF)

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3DG82

3DG82 NPN A B C PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 30 30 40 V V(BR)CEO ICE=0.1mA 20 20 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 1.0 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A VBEsat 1

Datasheet: 3DG720 , 3DG752TM , 3DG8 , 3DG8050 , 3DG8050A , 3DG8050M , 3DG8051 , 3DG817 , TIP3055 , 3DG847B , 3DG9013 , 3DG9014 , 3DG930 , 3DG945 , 3DG945M , 3DK001 , 3DK002 .

History: ST31 | BCW60RA | BC559BTA | BC53PA | NPS4250A | 2SC3597C | GA4L4K

Keywords - 3DG82 transistor datasheet

 3DG82 cross reference
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