All Transistors. 3DG9014 Datasheet

 

3DG9014 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG9014

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.45 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 2.2 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92

3DG9014 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG9014 Datasheet (PDF)

1.1. 3dg9014.pdf Size:245K _china

3DG9014
3DG9014

S9014(3DG9014) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低电平、低噪声的前置放大器。 Purpose: Low frequency, low noise amplifier. 特点:P 大,h 高而且特性好,与 S9015(3CG9015)互补。 C FE Features: High P and h excellent h linearity, complementary pair with S9015(3CG9015). C FE FE 极限参数/Absolute maximum ratings(Ta=25℃) 参数

4.1. 3dg9013.pdf Size:222K _china

3DG9014
3DG9014

9013(3DG9013) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于收音机推挽功放。 Purpose: Amplifier of portable radios in class B push-pull operation. 特点:P 、I 大, h 特性极好,与 9012(3CG9012)互补。 C C FE Features: High P and I , excellent h linearity, complementary pair with 9012(3CG9012). C C FE 极限参数/Absolute maximum ratings(Ta=25℃)

 

Datasheet: D33D3 , D33D30 , D33D4 , D33D5 , D33D6 , D33J21 , D33J22 , D33J23 , TIP122 , D33J25 , D33J26 , D33J27 , D33J28 , D33J29 , D33J30 , D33K1 , D33K2 .

 
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