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3DG9014 Specs and Replacement


   Type Designator: 3DG9014
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.45 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 2.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92

 3DG9014 Transistor Equivalent Substitute - Cross-Reference Search

   

3DG9014 detailed specifications

 ..1. Size:245K  lzg
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3DG9014

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 8.1. Size:563K  jilin sino
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3DG9014

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 8.2. Size:222K  foshan
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3DG9014

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Detailed specifications: 3DG8050 , 3DG8050A , 3DG8050M , 3DG8051 , 3DG817 , 3DG82 , 3DG847B , 3DG9013 , TIP3055 , 3DG930 , 3DG945 , 3DG945M , 3DK001 , 3DK002 , 3DK010 , 3DK023F , 3DK024E .

Keywords - 3DG9014 transistor specs

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