All Transistors. 3DG9014 Datasheet

 

3DG9014 Datasheet and Replacement


   Type Designator: 3DG9014
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.45 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 2.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92
 

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3DG9014 Datasheet (PDF)

 ..1. Size:245K  lzg
 3dg9014.pdf pdf_icon

3DG9014

S9014(3DG9014) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency, low noise amplifier. :P ,h , S9015(3CG9015) C FEFeatures: High P and h excellent h linearity, complementary pair with S9015(3CG9015). C FE FE/Absolute maximum ratings(Ta=25)

 8.1. Size:563K  jilin sino
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3DG9014

NPN NPN EPITAXIAL SILICON TRANSISTOR R3DG9013 MAIN CHARACTERISTICS Package I 500mA CV 20V CEOP 625mW C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit TO-92

 8.2. Size:222K  foshan
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3DG9014

9013(3DG9013) NPN /SILICON NPN TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , h , 9012(3CG9012) C C FEFeatures: High P and I , excellent h linearity, complementary pair with 9012(3CG9012). C C FE/Absolute maximum ratings(Ta=25)

Datasheet: 3DG8050 , 3DG8050A , 3DG8050M , 3DG8051 , 3DG817 , 3DG82 , 3DG847B , 3DG9013 , 13009 , 3DG930 , 3DG945 , 3DG945M , 3DK001 , 3DK002 , 3DK010 , 3DK023F , 3DK024E .

History: BF298 | 2SA1979 | TN2270 | HD1A4M | 2SC2258Y | 2SC3510

Keywords - 3DG9014 transistor datasheet

 3DG9014 cross reference
 3DG9014 equivalent finder
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