3DG945 Specs and Replacement
Type Designator: 3DG945
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: TO92
3DG945 Substitution
- BJT ⓘ Cross-Reference Search
3DG945 datasheet
2SC945(3DG945) NPN /SILICON NPN TRANSISTOR /Purpose AF amplifier and low speed switching applications. , h /Features High voltage, excellent h linearity. FE FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 60 V CBO V 50 V CEO V 5.0 V E... See More ⇒
2SC945M(3DG945M) NPN /SILICON NPN TRANSISTOR /Purpose General power amplifier application and low speed switching. , /Features High voltage, excellent h linearity. FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 60 V CBO V 50 V CEO... See More ⇒
Detailed specifications: 3DG8050M, 3DG8051, 3DG817, 3DG82, 3DG847B, 3DG9013, 3DG9014, 3DG930, BC557, 3DG945M, 3DK001, 3DK002, 3DK010, 3DK023F, 3DK024E, 3DK030, 3DK050
Keywords - 3DG945 pdf specs
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History: BC857B
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