All Transistors. 3DK001 Datasheet

 

3DK001 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DK001

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

3DK001 Transistor Equivalent Substitute - Cross-Reference Search

 

3DK001 Datasheet (PDF)

1.1. 3dk001.pdf Size:185K _china

3DK001

3DK001 型 NPN 硅大功率开关晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM TC=25℃ 1 W ICM 0.2 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 150 ℃/W IC=0.03A V(BR)CBO ICB=1mA ≥25 ≥50 ≥100 ≥150 ≥200 V V(BR)CEO ICE=1mA ≥25 ≥50 ≥100 ≥150 ≥200 V V(BR)EBO IEB=1mA ≥5.0 V ICBO VCB=20V ≤1.0 mA 直 流 ICEO V

5.1. 3dk002.pdf Size:159K _china

3DK001

3DK002 型 NPN 硅大功率开关晶体管 规范值 参数符号 测试条件 单位 A B C D PCM TC=25℃ 30 W 极 ICM 3 A 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=5mA ≥40 ≥60 ≥80 ≥100 V V(BR)CEO ICE=5mA ≥40 ≥60 ≥80 ≥100 V V(BR)EBO IEB=1mA ≥5.0 V ICEO VCE=30V ≤0.5 mA 直 VBEsat ≤1.6 IC=1A 流 V IB=0.1A VCEsat ≤0.5 参 VCE

Datasheet: D32P3 , D32P4 , D32S1 , D32S10 , D32S2 , D32S3 , D32S4 , D32S5 , 2N2222 , D32S7 , D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 .

 
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