All Transistors. 3DK402 Datasheet

 

3DK402 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DK402

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO276AB_TO220_TO257

3DK402 Transistor Equivalent Substitute - Cross-Reference Search

 

3DK402 Datasheet (PDF)

1.1. 3dk402.pdf Size:201K _china

3DK402

3DK402 型 NPN 硅大功率开关晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM TC=25℃ 50 W ICM 5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V RthJC 3 ℃/W IC=1.5A V(BR)CBO ICB=1mA ≥150 ≥220 ≥250 ≥300 ≥350 V V(BR)CEO ICE=1mA ≥150 ≥220 ≥250 ≥300 ≥350 V V(BR)EBO IEB=1mA ≥5.0 V ICBO VCB=20V ≤0.5 mA 直 流 ICEO

5.1. 3dk40b.pdf Size:117K _china

3DK402

3DK40B 型 NPN 硅大功率开关晶体管 参数符号 测试条件 规范值 单位 PCM TC=25℃ 225 W 极 ICM 15 A 限 Tjm 175 ℃ 值 Tstg -55~175 ℃ V(BR)CBO ICB=2mA ≥50 V V(BR)CEO ICE=2mA ≥50 V V(BR)EBO IEB=2mA ≥5.0 V 直 ICBO VCB=50V ≤1.5 mA 流 参 VBEsat ≤1.5 IC=10A V 数 IB=1A VCEsat ≤0.8 VCE=3V hFE ≥20 IC=10A 交 tr ≤0.9

5.2. 3dk405.pdf Size:166K _china

3DK402

3DK405 型 NPN 硅大功率开关晶体管 规范值 参数符号 测试条件 单位 A B C D E F G PCM TC=25℃ 200 W ICM 30 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 0.75 ℃/W IC=5A V(BR)CBO ICB=1mA ≥100 ≥150 ≥200 ≥250 ≥300 ≥350 ≥400 V V(BR)CEO ICE=1mA ≥100 ≥150 ≥200 ≥250 ≥300 ≥350 ≥400 V V(BR)EBO IEB=1mA ≥5.0 V ICBO

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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