All Transistors. 3DK7 Datasheet

 

3DK7 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DK7

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO92_SOT23_TO18

3DK7 Transistor Equivalent Substitute - Cross-Reference Search

 

3DK7 Datasheet (PDF)

1.1. mje13003dk7.pdf Size:244K _update

3DK7
3DK7

MJE13003DK7(3DD13003DK7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.2. 3dk7.pdf Size:151K _china

3DK7

3DK7 型 NPN 硅小功率开关晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=25℃ 300 mW 极 ICM 50 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥20 ≥40 ≥60 ≥20 ≥40 ≥60 V V(BR)CEO ICE=0.1mA ≥15 ≥30 ≥45 ≥15 ≥30 ≥45 V V(BR)EBO IEB=0.1mA ≥5.0 V ICBO VCB=10V ≤0.1 μA 直 ICEO VCE=10V ≤0.1 μA 流

 

Datasheet: D32P3 , D32P4 , D32S1 , D32S10 , D32S2 , D32S3 , D32S4 , D32S5 , 2N2222 , D32S7 , D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 .

 
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