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3SC2655 Specs and Replacement

Type Designator: 3SC2655

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: TO3 TO18

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3SC2655 datasheet

 ..1. Size:133K  china

 3sc2655.pdf pdf_icon

3SC2655

3DD2655(3SC2655) NPN A B C D E PCM Tc=75 0.9 W ICM 2 A Tjm 175 Tstg -55 150 VCE=10V Rth 111 /W IC=0.2A V(BR)CBO ICB=0.1mA 20 35 50 80 120 V V(BR)CEO ICE=0.1mA 20 35 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 20 A ... See More ⇒

Detailed specifications: 3DK8, 3DK9, 3N1151GP, 3N13003GP, 3N440GP, 3N772GP, 3N882GP, 3RA2114, 2SD669A, 3STF1640, 3STL2540, PH0814-40, PH1090-15L, PH1090-175L, PH1090-350L, PH1090-55S, PH1090-700B

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