All Transistors. PH1090-175L Datasheet

 

PH1090-175L Datasheet and Replacement


   Type Designator: PH1090-175L
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 375 W
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 10.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1090 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8.3
   Noise Figure, dB: -
   Package: CERAMIC
      - BJT Cross-Reference Search

   

PH1090-175L Datasheet (PDF)

 ..1. Size:138K  macom
ph1090-175l.pdf pdf_icon

PH1090-175L

PH1090-175L Avionics Pulsed Power Transistor Released, 30 May 07 175W, 1090 MHz, 250s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and ou

 6.1. Size:145K  macom
ph1090-15l.pdf pdf_icon

PH1090-175L

PH1090-15L Avionics Pulsed Power Transistor Released, 30 May 07 15W, 1030-1090 MHz, 250s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and

 7.1. Size:193K  macom
ph1090-700b.pdf pdf_icon

PH1090-175L

PH1090-700B Avionics Pulsed Power Transistor M/A-COM Products 700W, 1030-1090 MHz, 32s Pulse, 2% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system I

 7.2. Size:142K  macom
ph1090-55s.pdf pdf_icon

PH1090-175L

PH1090-550S Avionics Pulsed Power Transistor M/A-COM Products 550W, 1090 MHz, 10s Pulse, 1% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KSD5741 | 2SC5489 | MM3725 | GD242 | AC166 | DMC364A6 | BDX84A

Keywords - PH1090-175L transistor datasheet

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 PH1090-175L equivalent finder
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