All Transistors. PH1214-25M Datasheet

 

PH1214-25M Datasheet, Equivalent, Cross Reference Search


   Type Designator: PH1214-25M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 67 W
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 2.8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 9.5
   Noise Figure, dB: -
   Package: CERAMIC

 PH1214-25M Transistor Equivalent Substitute - Cross-Reference Search

   

PH1214-25M Datasheet (PDF)

 ..1. Size:133K  macom
ph1214-25m.pdf

PH1214-25M
PH1214-25M

PH1214-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 5.1. Size:126K  macom
ph1214-25l.pdf

PH1214-25M
PH1214-25M

PH1214-25L Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 300s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 6.1. Size:143K  macom
ph1214-220m.pdf

PH1214-25M
PH1214-25M

PH1214-220M Radar Pulsed Power Transistor M/A-COM Products 220W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 6.2. Size:137K  macom
ph1214-2m.pdf

PH1214-25M
PH1214-25M

PH1214-2M Radar Pulsed Power Transistor M/A-COM Products 2W, 1.2-1.4 GHz, 100s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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