PH1214-25M PDF and Equivalents Search

 

PH1214-25M Specs and Replacement

Type Designator: PH1214-25M

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 67 W

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 2.8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1400 MHz

Forward Current Transfer Ratio (hFE), MIN: 9.5

Noise Figure, dB: -

Package: CERAMIC

 PH1214-25M Substitution

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PH1214-25M datasheet

 ..1. Size:133K  macom

ph1214-25m.pdf pdf_icon

PH1214-25M

PH1214-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern... See More ⇒

 5.1. Size:126K  macom

ph1214-25l.pdf pdf_icon

PH1214-25M

PH1214-25L Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 300 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern... See More ⇒

 6.1. Size:143K  macom

ph1214-220m.pdf pdf_icon

PH1214-25M

PH1214-220M Radar Pulsed Power Transistor M/A-COM Products 220W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte... See More ⇒

 6.2. Size:137K  macom

ph1214-2m.pdf pdf_icon

PH1214-25M

PH1214-2M Radar Pulsed Power Transistor M/A-COM Products 2W, 1.2-1.4 GHz, 100 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal... See More ⇒

Detailed specifications: PH1090-75L, PH1113-100, PH1214-0.85L, PH1214-100EL, PH1214-110M, PH1214-12M, PH1214-220M, PH1214-25L, MJE350, PH1214-2M, PH1214-300M, PH1214-30EL, PH1214-3L, PH1214-40M, PH1214-55EL, PH1214-6M, PH1214-80M

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