All Transistors. PH2931-20M Datasheet

 

PH2931-20M Datasheet and Replacement


   Type Designator: PH2931-20M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 115 W
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 1.85 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8.2
   Noise Figure, dB: -
   Package: CERAMIC
 

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PH2931-20M Datasheet (PDF)

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PH2931-20M

PH2931-20M Radar Pulsed Power Transistor M/A-COM Products 20W, 2.9-3.1 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

Datasheet: PH2729-130M , PH2729-25M , PH2729-65M , PH2729-8.5M , PH2731-20M , PH2731-5M , PH2731-75L , PH2856-160 , A1015 , PH3134-10M , PH3134-20L , PH3134-25M , PH3134-30S , PH3134-55L , PH3134-65M , PH3135-20M , PH3135-25S .

History: S8550L | 2SD52A

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