All Transistors. PH2931-20M Datasheet

 

PH2931-20M Datasheet and Replacement


   Type Designator: PH2931-20M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 115 W
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 1.85 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8.2
   Noise Figure, dB: -
   Package: CERAMIC
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PH2931-20M Datasheet (PDF)

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PH2931-20M

PH2931-20M Radar Pulsed Power Transistor M/A-COM Products 20W, 2.9-3.1 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SD1609C | 2SB878 | MJ11012 | GS111C | CXT2222A | ET5253 | FC107

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