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PHPT60610NY PDF Specs and Replacement


   Type Designator: PHPT60610NY
   SMD Transistor Code: 0610NAB
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics


   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT669
 

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PHPT60610NY PDF detailed specifications

 ..1. Size:242K  nxp
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PHPT60610NY

PHPT60610NY 60 V, 10 A NPN high power bipolar transistor 27 May 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60610PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C... See More ⇒

 5.1. Size:239K  nxp
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PHPT60610NY

PHPT60610PY 60 V, 10 A PNP high power bipolar transistor 27 May 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60610NY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C... See More ⇒

 7.1. Size:305K  nxp
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PHPT60610NY

PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60603PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed... See More ⇒

 7.2. Size:230K  nxp
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PHPT60610NY

PHPT60606PY 60 V, 6 A PNP high power bipolar transistor 9 December 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60606NY. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C ... See More ⇒

Detailed specifications: PHPT60410NY , PHPT60410PY , PHPT60415NY , PHPT60415PY , PHPT60603NY , PHPT60603PY , PHPT60606NY , PHPT60606PY , S9014 , PHPT60610PY , PHPT61002NYC , PHPT61002PYC , PHPT610030NK , PHPT610030NPK , PHPT610030PK , PHPT610035NK , PHPT610035PK .

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