All Transistors. PHPT60610NY Datasheet

 

PHPT60610NY Datasheet and Replacement


   Type Designator: PHPT60610NY
   SMD Transistor Code: 0610NAB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT669
 
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PHPT60610NY Datasheet (PDF)

 ..1. Size:242K  nxp
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PHPT60610NY

PHPT60610NY60 V, 10 A NPN high power bipolar transistor27 May 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT60610PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C

 5.1. Size:239K  nxp
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PHPT60610NY

PHPT60610PY60 V, 10 A PNP high power bipolar transistor27 May 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT60610NY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C

 7.1. Size:305K  nxp
 phpt60603ny.pdf pdf_icon

PHPT60610NY

PHPT60603NY60V, 3 A NPN high power bipolar transistor10 January 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT60603PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed

 7.2. Size:230K  nxp
 phpt60606py.pdf pdf_icon

PHPT60610NY

PHPT60606PY60 V, 6 A PNP high power bipolar transistor9 December 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT60606NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

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Datasheet: PHPT60410NY , PHPT60410PY , PHPT60415NY , PHPT60415PY , PHPT60603NY , PHPT60603PY , PHPT60606NY , PHPT60606PY , 2SC4793 , PHPT60610PY , PHPT61002NYC , PHPT61002PYC , PHPT610030NK , PHPT610030NPK , PHPT610030PK , PHPT610035NK , PHPT610035PK .

History: BC817-25LT1G | NJVMJD31CT4G

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