PMD18D100 Datasheet and Replacement
Type Designator: PMD18D100
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 1200 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TO3
PMD18D100 Substitution
PMD18D100 Datasheet (PDF)
pmd18d100.pdf

PMD18D100SEMELABMECHANICAL DATANPN DARLINGTONDimensions in mmPOWER TRANSISTOR26.6 max. 9.0 max.FEATURES4. 22. 5 TO3 PACKAGE 100V 100A PEAKB E 300 WATTSDESCRIPTIONThe PMD18D100 is an NPN Darlington10.912.8Power Transistor in a hermetic TO3 package.The device is a monolothic epitaxial structureTO3 Package.with built in base-emitter shunt r
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC3896 | NB013EV | 2SC3788E | 2SA57 | NB014HK | 2SB178B | STD815CP40
Keywords - PMD18D100 transistor datasheet
PMD18D100 cross reference
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PMD18D100 lookup
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History: 2SC3896 | NB013EV | 2SC3788E | 2SA57 | NB014HK | 2SB178B | STD815CP40



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