PMD2001D Datasheet and Replacement
Type Designator: PMD2001D
SMD Transistor Code: 9E
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.54 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT457
PMD2001D Substitution
PMD2001D Datasheet (PDF)
pmd2001d.pdf

PMD2001DMOSFET driverRev. 02 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.1.2 Features Switching transistors in push-pull configuration Application-optimized pinout Space-saving solution Internal connections to minimize layo
wpmd2008.pdf

WPMD2008WPMD2008Http://www.sh-willsemi.com 4Dual P-Channel, -20 V, - .1A, Power MOSFET DescriptionThe WPMD2008 uses advanced trench technology and design toprovide excellent RDS(ON) with low gate charge. This device is suitablefor use in DC-DC conversion applications. Standard ProductWPMD2008 is Pb-free.FeaturesV R MAX(BR)DSS DS(on)110m @ -4.5V-20 V138m @ -2.5VPI
mpmd200b120rh.pdf

MPM B120RHMD200B NPT & R d Type 1200V leN Rugged e V IGBT ModulGeneral D on DescriptioFeaatures MagnaChips IGBT Mod package dule 7DM-3 p BVCES= 1200VV Lo n Loss : VCE(sa = 2.7V (typ.) ow Conductionat)devices are optimized to ses and o reduce lossast & Soft Anti-Parallel FWD Fa D Sh ed : Min. 10ushort circuit rate s at TC=100 switch
Datasheet: PMBT4403YS , PMBTA42DS , PMBTA44 , PMD1047 , PMD18D100 , PMD18D80 , PMD19D100 , PMD19D80 , 2SA1015 , PMD20K200 , PMD2495 , PMD3001D , PMD313 , PMD718 , PMD880 , PMD9001D , PMD9002D .
History: BCP3019 | S9012I | TED1602A | 2N6547 | 2N438A | 2N1666 | RS7637
Keywords - PMD2001D transistor datasheet
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History: BCP3019 | S9012I | TED1602A | 2N6547 | 2N438A | 2N1666 | RS7637



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