PNT523T503E0-2 Specs and Replacement
Type Designator: PNT523T503E0-2
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 11 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Package: SOT523
PNT523T503E0-2 Substitution
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PNT523T503E0-2 datasheet
PNT523T503E0-2 High EB High DC gain Ultra-Small package switch transistor Feature 3-Collector This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Package SOT-523 Emitter -Base Breakdown Voltage 11V High DC current gain typical 380 Low Saturation Voltage 80mv 0.15 continuous collector current 2-Emitter 1-Base NPN switch transistor ... See More ⇒
Detailed specifications: PN2222AG, PN2222ARLRAG, PN2222ARLRMG, PN2222ARLRPG, PN2222-H, PN2222-L, PN4209, PNT23T503E0-2, C5198, PNT723T503E0-2, PNTET50V01, PPT523T503E0-2, PPT89T30V5AE2M, PPT8N30E2, PQMD12, PT236T30E2, PT236T30E2H
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