All Transistors. PT236T30E2M Datasheet

 

PT236T30E2M Datasheet and Replacement


   Type Designator: PT236T30E2M
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT23-6L
 

 PT236T30E2M Substitution

   - BJT ⓘ Cross-Reference Search

   

PT236T30E2M Datasheet (PDF)

 ..1. Size:122K  prisemi
pt236t30e2m.pdf pdf_icon

PT236T30E2M

PT236T30E2M Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified

 4.1. Size:156K  prisemi
pt236t30e2.pdf pdf_icon

PT236T30E2M

PT236T30E2 Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow tem

 4.2. Size:123K  prisemi
pt236t30e2h.pdf pdf_icon

PT236T30E2M

PT236T30E2H Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3.5A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualifi

 9.1. Size:322K  central
cmpt2369.pdf pdf_icon

PT236T30E2M

CMPT2369www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and high speed switching applications. MARKING CODE: C1JSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL

Datasheet: PNT723T503E0-2 , PNTET50V01 , PPT523T503E0-2 , PPT89T30V5AE2M , PPT8N30E2 , PQMD12 , PT236T30E2 , PT236T30E2H , A1941 , PT23T2222A , PT23T2907A , PT23T3904 , PT23T3906 , PT23T5401 , PT23T5551 , PT23T8050 , PT23T8550 .

History: BC528-6 | HN1A01FE | BC538-25

Keywords - PT236T30E2M transistor datasheet

 PT236T30E2M cross reference
 PT236T30E2M equivalent finder
 PT236T30E2M lookup
 PT236T30E2M substitution
 PT236T30E2M replacement

 

 
Back to Top

 


 
.