All Transistors. PT236T30E2M Datasheet

 

PT236T30E2M Datasheet and Replacement


   Type Designator: PT236T30E2M
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT23-6L
      - BJT Cross-Reference Search

   

PT236T30E2M Datasheet (PDF)

 ..1. Size:122K  prisemi
 pt236t30e2m.pdf pdf_icon

PT236T30E2M

PT236T30E2M Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified

 4.1. Size:156K  prisemi
 pt236t30e2.pdf pdf_icon

PT236T30E2M

PT236T30E2 Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow tem

 4.2. Size:123K  prisemi
 pt236t30e2h.pdf pdf_icon

PT236T30E2M

PT236T30E2H Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3.5A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualifi

 9.1. Size:322K  central
 cmpt2369.pdf pdf_icon

PT236T30E2M

CMPT2369www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and high speed switching applications. MARKING CODE: C1JSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL

SHOW MORE

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: KT208I | DRC9143X | BDY12B | 2SC1127-3 | 2SD1007HR | ED1602D | SFE245

Keywords - PT236T30E2M transistor datasheet

 PT236T30E2M cross reference
 PT236T30E2M equivalent finder
 PT236T30E2M lookup
 PT236T30E2M substitution
 PT236T30E2M replacement

 

 
Back to Top

 


 
.