PT23T5401 Datasheet, Equivalent, Cross Reference Search
Type Designator: PT23T5401
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 Β°C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT23
PT23T5401 Transistor Equivalent Substitute - Cross-Reference Search
PT23T5401 Datasheet (PDF)
1.1. pt23t5401.pdf 
Size:112K _upd
ο»Ώ PT23T5401 Transistor Feature 3 - Collector 1 - Base ο PNP epitaxial planar silicon transistor 2 - Emitter Mechanical Characteristics ο Lead finish:100% matte Sn(Tin) ο Mounting position: Any ο Qualified max reflow temperature:260β ο Device meets MSL 1 requirements ο Pure tin plating: 7 ~ 17 um ο Pin flatness:β€3mil Absolute maximum rating@25β P
4.1. pt23t5551.pdf Size:113K _upd
ο»Ώ PT23T5551 Transistor Feature 3 - Collector 1 - Base ο This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics ο Lead finish:100% matte Sn(Tin) ο Mounting position: Any ο Qualified max reflow temperature:260β ο Device meets MSL 1 requirements ο Pure tin plating: 7 ~ 17 um ο Pin flatness:β€3mil Structu
5.1. pt23t9014.pdf Size:125K _upd
ο»Ώ PT23T9014 Transistor Feature 3 - Collector 1 - Base ο This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 2 - Emitter Mechanical Characteristics ο Lead finish:100% matte Sn(Tin) ο Mounting position: Any ο Qualified max reflow temperature:260β ο Device meets MSL 1 requirements ο Pure tin plating: 7 ~ 17 um ο Pin flatness:β€3mil Structu
5.2. pt23t3904.pdf Size:121K _upd
ο»Ώ PT23T3904 Transistor Feature 3 - Collector 1 - Base ο This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics ο Lead finish:100% matte Sn(Tin) ο Mounting position: Any ο Qualified max reflow temperature:260β ο Device meets MSL 1 requirements ο Pure tin plating: 7 ~ 17 um ο Pin flatness:β€3mil Structu
5.3. pt23t8050.pdf Size:113K _upd
ο»Ώ PT23T8050 Transistor Feature 3 - Collector 1 - Base ο This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics ο Lead finish:100% matte Sn(Tin) ο Mounting position: Any ο Qualified max reflow temperature:260β ο Device meets MSL 1 requirements ο Pure tin plating: 7 ~ 17 um ο Pin flatness:β€3mil Structu
5.4. pt23t9013.pdf Size:125K _upd
ο»Ώ PT23T9013 Transistor Feature 3 - Collector 1 - Base ο This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 2 - Emitter Mechanical Characteristics ο Lead finish:100% matte Sn(Tin) ο Mounting position: Any ο Qualified max reflow temperature:260β ο Device meets MSL 1 requirements ο Pure tin plating: 7 ~ 17 um ο Pin flatness:β€3mil Structu
5.5. pt23t2222a.pdf Size:125K _upd
ο»Ώ PT23T2222A NPN switching transistor Description 3 - Collector NPN switching transistor in a SOT-23 plastic package. 1 - Base 2 - Emitter Feature 3 ο High current (max. 600 mA) ο Lead finish:100% matte Sn(Tin) ο Mounting position: Any ο Qualified max reflow temperature:260β ο Device meets MSL 1 requirements 1 2 ο Pure tin plating: 7 ~ 17 um Fig.1 S
5.6. pt23t2907a.pdf Size:132K _upd
ο»Ώ PT23T2907A Transistor Feature 3 - Collector 1 - Base ο PNP epitaxial planar silicon transistor 2 - Emitter Mechanical Characteristics ο Lead finish:100% matte Sn(Tin) ο Mounting position: Any ο Qualified max reflow temperature:260β ο Device meets MSL 1 requirements ο Pure tin plating: 7 ~ 17 um ο Pin flatness:β€3mil Absolute maximum rating@25β
5.7. pt23t3906.pdf Size:122K _upd
ο»Ώ PT23T3906 Transistor Feature 3 - Collector 1 - Base ο This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics ο Lead finish:100% matte Sn(Tin) ο Mounting position: Any ο Qualified max reflow temperature:260β ο Device meets MSL 1 requirements ο Pure tin plating: 7 ~ 17 um ο Pin flatness:β€3mil Structu
5.8. pt23t8550.pdf Size:113K _upd
ο»Ώ PT23T8550 Transistor Feature 3 - Collector 1 - Base ο This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics ο Lead finish:100% matte Sn(Tin) ο Mounting position: Any ο Qualified max reflow temperature:260β ο Device meets MSL 1 requirements ο Pure tin plating: 7 ~ 17 um ο Pin flatness:β€3mil Structu
Datasheet: PQMD12 , PT236T30E2 , PT236T30E2H , PT236T30E2M , PT23T2222A , PT23T2907A , PT23T3904 , PT23T3906 , BC148 , PT23T5551 , PT23T8050 , PT23T8550 , PT23T9013 , PT23T9014 , PT9730 , PT9731 , PT9732 .
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