PT9790 Datasheet and Replacement
Type Designator: PT9790
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: CASE211-11
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PT9790 Datasheet (PDF)
pt9790.pdf

HG RF POWER TRANSISTORPT9790SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORPT9790SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD2134 | 2STX1360 | ESM3004 | NSS1C301E | AF186GN | KSD1021Y | ED1701K
Keywords - PT9790 transistor datasheet
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History: 2SD2134 | 2STX1360 | ESM3004 | NSS1C301E | AF186GN | KSD1021Y | ED1701K



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