PT9790 Datasheet, Equivalent, Cross Reference Search
Type Designator: PT9790
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: CASE211-11
PT9790 Transistor Equivalent Substitute - Cross-Reference Search
PT9790 Datasheet (PDF)
1.1. pt9790.pdf 
Size:332K _upd
HG RF POWER TRANSISTOR PT9790 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change. Sep. 1998 www.HGSemi.com HG RF POWER TRANSISTOR PT9790 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change. Sep. 1998
Datasheet: D32W7 , D32W8 , D32W9 , D33D1 , D33D2 , D33D21 , D33D22 , D33D23 , S9014 , D33D25 , D33D26 , D33D27 , D33D28 , D33D29 , D33D3 , D33D30 , D33D4 .
