PT9790 Datasheet, Equivalent, Cross Reference Search
Type Designator: PT9790
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: CASE211-11
PT9790 Transistor Equivalent Substitute - Cross-Reference Search
PT9790 Datasheet (PDF)
1.1. pt9790.pdf 
Size:332K _upd
HG RF POWER TRANSISTOR PT9790 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change. Sep. 1998 www.HGSemi.com HG RF POWER TRANSISTOR PT9790 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change. Sep. 1998
Datasheet: PT23T8050 , PT23T8550 , PT23T9013 , PT23T9014 , PT9730 , PT9731 , PT9732 , PT9734 , 2N222 , 2N1131L , 2N1132CSM , 2N1132DCSM , 2N1132L , 2N1714S , 2N1715S , 2N1716S , 2N1717S .
