PT9790 Specs and Replacement
Type Designator: PT9790
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: CASE211-11
PT9790 Substitution
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PT9790 datasheet
HG RF POWER TRANSISTOR PT9790 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep. 1998 www.HGSemi.com HG RF POWER TRANSISTOR PT9790 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep. 1998... See More ⇒
Detailed specifications: PT23T8050, PT23T8550, PT23T9013, PT23T9014, PT9730, PT9731, PT9732, PT9734, S8550, 2N1131L, 2N1132CSM, 2N1132DCSM, 2N1132L, 2N1714S, 2N1715S, 2N1716S, 2N1717S
Keywords - PT9790 pdf specs
PT9790 cross reference
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