All Transistors. 2N2604UB Datasheet

 

2N2604UB Datasheet and Replacement


   Type Designator: 2N2604UB
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: UB
 

 2N2604UB Substitution

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2N2604UB Datasheet (PDF)

 ..1. Size:152K  microsemi
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2N2604UB

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 DEVICES LEVELS 2N2604 2N2604UB JAN 2N2605 2N2605UB JANTX JANTXV

 8.1. Size:54K  microsemi
 2n2604 2n2605.pdf pdf_icon

2N2604UB

TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices Qualified Level JAN, JANTX 2N2604 2N2605 JANTXV MAXIMUM RATINGS Ratings Symbol 2N2604 2N2605 Units Collector-Base Voltage 80 70 Vdc VCBO Collector-Emitter Voltage 60 Vdc VCEO Emitter-Base Voltage 6.0 Vdc VEBO Collector Current 30 mAdc IC Total Power Dissipation @ TA = +250

 9.1. Size:45K  microsemi
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2N2604UB

TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/295 Devices Qualified Level 2N2608 JAN ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V 30 V GSS(1)Power Dissipation T = +250C P 300 mW A D0Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 C (1) Derate

 9.2. Size:45K  microsemi
 2n2609.pdf pdf_icon

2N2604UB

TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/296 Devices Qualified Level 2N2609 JAN ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V 30 V GSS(1)Power Dissipation T = +250C P 300 mW A D0Operating Junction & Storage Temperature Range Top Tstg -65 to +200 C , (1) Dera

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Datasheet: 2N2270AL , 2N2411X , 2N2412BX , 2N2412X , 2N2432AUB , 2N2432UB , 2N2484UA , 2N2484UBC , D965 , 2N2696CSM , 2N2857C1 , 2N2857C1A , 2N2857C1B , 2N2891SMD05 , 2N2894AC1A , 2N2894AC1B , 2N2894ADCSM .

History: 2SC586 | STBD137T | 2SD18 | 2N1016 | 2N3446 | 2N1015A | 2N237

Keywords - 2N2604UB transistor datasheet

 2N2604UB cross reference
 2N2604UB equivalent finder
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