2N3209XCSM pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N3209XCSM Specs and Replacement

Type Designator: 2N3209XCSM

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 400 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: LCC1

2N3209XCSM Substitution

- BJT ⓘ Cross-Reference Search

2N3209XCSM datasheet

..1. Size:25K semelab

2n3209xcsm.pdf pdf_icon

2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) APPLICATIONS 3 2 1 FEATURES SILICON PLANAR EPITAXIAL PNP 1.91 0.10 (0.075 0.004) A TRANSISTOR 0.31 rad. (0.012) 3.05 0.13 HERMETIC CERAMIC SURFACE MOUNT (0.12 0.005) 1.40 (0.055) PA... See More ⇒

7.1. Size:24K semelab

2n3209x.pdf pdf_icon

2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209) TRANSISTOR 4.95 (0.195) 4.52 (0.178) FOR HIGH RELIABILITY APPLICATIONS FEATURES SILICON PLANAR EPITAXIAL PNP TRANSISTOR SCREENING OPTIONS AVAILABLE 0.48 (0.019) SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) HIGH SPEED SATURATED SWITCHING dia. APPLI... See More ⇒

8.1. Size:113K st

2n2894 2n3209.pdf pdf_icon