All Transistors. 2N3634L Datasheet

 

2N3634L Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3634L

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO5

2N3634L Transistor Equivalent Substitute - Cross-Reference Search

 

2N3634L Datasheet (PDF)

0.1. 2n3634l.pdf Size:227K _microsemi

2N3634L
2N3634L

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637LJANSP 30K Rads (Si)

8.1. 2n3634 2n3635.pdf Size:87K _central

2N3634L
2N3634L

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

8.2. 2n3634csm.pdf Size:32K _semelab

2N3634L
2N3634L

2N3634CSMMECHANICAL DATAPNP SILICON TRANSISTOR IN ADimensions in mm (inches)HERMETICALLY SEALED CERAMICSURFACE MOUNT PACKAGE FOR0.51 0.10(0.02 0.004) 0.31 HIGH RELIABILITY APPLICATIONSrad.(0.012)3FEATURES21 High Voltage Switching1.91 0.10 Low Power Amplifier Applications(0.075 0.004)A0.31rad. Hermetic Ceramic Surface Mount(0.012)3.

 8.3. 2n3634 2n3635 2n3636 2n3637.pdf Size:219K _bocasemi

2N3634L
2N3634L

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com

8.4. 2n3634ub.pdf Size:227K _microsemi

2N3634L
2N3634L

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637LJANSP 30K Rads (Si)

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , D882 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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