2N3766SMD05 PDF Specs and Replacement
Type Designator: 2N3766SMD05
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 4 A
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO276AA
2N3766SMD05 Substitution
2N3766SMD05 PDF detailed specifications
2n3766smd05.pdf
2N3766SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 4A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab herm... See More ⇒
2n3766smd.pdf
2N3766SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 4A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0... See More ⇒
2n3766 2n3767.pdf
NPN Power Silicon Transistor 2N3766 & 2N3767 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/518 TO-66 (TO-213AA) Package Maximum Ratings Ratings Symbol 2N3766 2N3767 Units Collector - Emitter Voltage VCEO 60 80 Vdc Collector - Base Voltage VCBO 80 100 Vdc Emitter - Base Voltage VEBO 6.0 Vdc Base Current IB 2.0 Adc Collector Current IC 4.0 Adc Total Power Di... See More ⇒
Detailed specifications: 2N3735CSM4 , 2N3735L , 2N3737UB , 2N3740R , 2N3741SMD , 2N3762L , 2N3763L , 2N3766SMD , 2SC828 , 2N3767SMD , 2N3767SMD05 , 2N3768 , 2N3771G , 2N3772G , 2N3773G , 2N3789X , 2N3789XSMD .
History: 2N3789XSMD
Keywords - 2N3766SMD05 pdf specs
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History: 2N3789XSMD
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