2N3879SMD05 Specs and Replacement
Type Designator: 2N3879SMD05
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Emitter Voltage |Vce|: 75 V
Maximum Collector Current |Ic max|: 7 A
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 12
Package: TO276AA
2N3879SMD05 Substitution
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2N3879SMD05 datasheet
2N3879SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 75V IC = 7A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab herm... See More ⇒
2N3879SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 75V IC = 7A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0... See More ⇒
isc Silicon NPN Power Transistor 2N3879 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high speed switching and linear- amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
Detailed specifications: 2N3867S, 2N3867SMD05, 2N3867U4, 2N3868S, 2N3868SMD, 2N3868SMD05, 2N3868U4, 2N3879SMD, BC337, 2N3902T1, 2N3902T3, 2N3904G, 2N3904N, 2N3904SC, 2N3904-T18, 2N3906G, 2N3906-G
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