2N3879SMD05 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3879SMD05
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-emisor (Vce): 75 V
Corriente del colector DC máxima (Ic): 7 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Ganancia de corriente contínua (hfe): 12
Paquete / Cubierta: TO276AA
Búsqueda de reemplazo de 2N3879SMD05
2N3879SMD05 Datasheet (PDF)
2n3879smd05.pdf

2N3879SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 75V IC = 7A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm
2n3879smd.pdf

2N3879SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 75V IC = 7A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n3879.pdf

isc Silicon NPN Power Transistor 2N3879DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high speed switching and linear- amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Otros transistores... 2N3867S , 2N3867SMD05 , 2N3867U4 , 2N3868S , 2N3868SMD , 2N3868SMD05 , 2N3868U4 , 2N3879SMD , D882 , 2N3902T1 , 2N3902T3 , 2N3904G , 2N3904N , 2N3904SC , 2N3904-T18 , 2N3906G , 2N3906-G .
History: CSC3968 | 2N1900 | KTB1124 | 2SC1181 | KT911A | 2SC3431 | 2SC3361
History: CSC3968 | 2N1900 | KTB1124 | 2SC1181 | KT911A | 2SC3431 | 2SC3361



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